P0465CD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P0465CD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 59 nS
Cossⓘ - Capacitancia de salida: 52 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.6 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de P0465CD MOSFET
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P0465CD datasheet
p0465cd.pdf
P0465CD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6 @VGS = 10V 650V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current2 TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1
p0465cs.pdf
P0465CS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6m @VGS = 10V 650V 4A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1
p0465ct.pdf
P0465CT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6m @VGS = 10V 650V 4A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1
p0465ctf-s.pdf
P0465CTF/P0465CTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.7 @VGS = 10V 650V 4A 100% UIS tested TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C
Otros transistores... P0460CTF-P , P0460ED , P0460EI , P0460EIS , P0460ETF , P0465AD , P0465ATF , P0465ATFS , 7N65 , P0465CI , P0465CIS , P0465CS , P0465CT , P0465CTF , P0465CTFS , P0470ATF , P0470ATFS .
History: NCEP050N85D | UPA1874GR | APT10090BLL | P0465CIS
History: NCEP050N85D | UPA1874GR | APT10090BLL | P0465CIS
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