P0603BEAD Todos los transistores

 

P0603BEAD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P0603BEAD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 256 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
   Paquete / Cubierta: PDFN3X3P
 

 Búsqueda de reemplazo de P0603BEAD MOSFET

   - Selección ⓘ de transistores por parámetros

 

P0603BEAD Datasheet (PDF)

 ..1. Size:482K  unikc
p0603bead.pdf pdf_icon

P0603BEAD

P0603BEADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 56APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20 TC = 25 C56 TC = 100 C35IDContinuous Drain Current1,2 TA = 25 C14.5A

 8.1. Size:450K  unikc
p0603bd.pdf pdf_icon

P0603BEAD

P0603BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 5.8m @VGS = 10V 70ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C70IDContinuous Drain CurrentTC = 100 C44AIDM180Pulsed Drain Current1

 8.2. Size:479K  unikc
p0603bdb.pdf pdf_icon

P0603BEAD

P0603BDBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 72ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C72IDContinuous Drain Current2TC= 100 C46AIDM160Pulsed Drain Current1IASAvalanche Current 50E

 8.3. Size:662K  unikc
p0603bdg.pdf pdf_icon

P0603BEAD

P0603BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6.5m @VGS = 10V30V 68ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C68IDContinuous Drain CurrentTC= 100 C43AIDM180Pulsed Drain Current1

Otros transistores... P0903BDG , P0903BDL , P0603BD , P0603BDB , P0603BDD , P0603BDF , P0603BDG , P0603BDL , AON7403 , P0603BK , P0603BT , P0603BV , P0604BD , P0610BTF , P062ABD8 , P062ABDD , P062ABDF .

History: 2SK1023 | SQ2351ES | RJK6013DPE | RFP12N10 | IXFN360N10T | AP4P018M

 

 
Back to Top

 


 
.