P06P03LCGA Todos los transistores

 

P06P03LCGA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P06P03LCGA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 101 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT89
     - Selección de transistores por parámetros

 

P06P03LCGA Datasheet (PDF)

 ..1. Size:480K  unikc
 p06p03lcga.pdf pdf_icon

P06P03LCGA

P06P03LCGAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = -10V-30V -4ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-4IDContinuous Drain CurrentTA = 70 C-3AIDM-20Pulsed Drain Cur

 5.1. Size:315K  1
 p06p03lcg.pdf pdf_icon

P06P03LCGA

P-Channel Logic Level Enhancement P06P03LCGNIKO-SEM Mode Field Effect Transistor SOT-89Lead-FreeDPRODUCT SUMMARY 1. GATE V(BR)DSS RDS(ON) ID 2. DRAIN G3. SOURCE-30 45m -4A SABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VTC = 25 C -4

 5.2. Size:342K  unikc
 p06p03lcg.pdf pdf_icon

P06P03LCGA

P06P03LCGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 45m @VGS = -10V -3.5ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-3.5IDContinuous Drain CurrentTA = 70 C-2.8AIDM-20Pulsed Drain

 5.3. Size:342K  niko-sem
 p06p03lcg.pdf pdf_icon

P06P03LCGA

P06P03LCGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 45m @VGS = -10V -3.5ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-3.5IDContinuous Drain CurrentTA = 70 C-2.8AIDM-20Pulsed Drain

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK12J55D | IRFPC42R | SIHF9540S | HITJ0203MP | STD13NM60ND | SPP80P06PH | SI7611DN

 

 
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