P9006ETF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P9006ETF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 129 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de P9006ETF MOSFET
P9006ETF PDF Specs
p9006etf.pdf
P9006ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60 90m @VGS = 10V -15A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TC = 25 C -15 ID Continuous Drain Current1 TC = 100 C -9.5 A IDM -60 Pulsed Drain... See More ⇒
mtp9006e3.pdf
Spec. No. C733E3 Issued Date 2010.07.09 CYStech Electronics Corp. Revised Date Page No. 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTP9006E3 ID -10A 95m Features RDSON(MAX) Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220 MTP9006E3 G Gate D Drain S Source... See More ⇒
p9006ei.pdf
P9006EI P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90m @VGS = -10V -18A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C -18 ID Continuous Drain Current1 TC = 100 C -11 A IDM -50 Pulsed Drain Current2 IAS Avalanche Current ... See More ⇒
p9006esg.pdf
P9006ESG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90m @VGS = 10V -60V -18A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TC = 25 C -18 ID Continuous Drain Current TC = 100 C -12 A IDM -48 Pulsed Drain... See More ⇒
Otros transistores... P06P03LCG , P06P03LCGA , P06P03LDG , P06P03LVG , P9006EDG , P9006EI , P9006EL , P9006ESG , IRF640 , P9006EVG , P0703BD , P0703ED , P0703EV , P0765ATF , P0765GTF , P0765GTFS , P0770EI .
Liste
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