P0903BEA Datasheet. Equivalente

 ..1. Size:576K  unikc
 p0903bea.pdf

P0903BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 48A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 48 TC = 100 C 30 ID Continuous Drain Current2 TA = 25 C 13 A TA =

 8.1. Size:480K  unikc
 p0903bk.pdf

P0903BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9m @VGS = 10V 30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 30 (Package Limited) ID Continuous Drain Current2 TC = 25 C(Silicon Limited) 6

 8.2. Size:508K  unikc
 p0903bv.pdf

P0903BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.65m @VGS = 10V 30V 13A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 13 ID Continuous Drain Current TA = 100 C 8 A IDM 50 Pulsed Drain Current1 IAS Avalanche Cur

 8.3. Size:455K  unikc
 p0903bdl.pdf

P0903BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 9.5m @VGS = 10V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 56 ID Continuous Drain Current TC = 100 C 35 A IDM 160 Pulsed Drain Current

 8.4. Size:371K  unikc
 p0903bt.pdf

P0903BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9.7m @VGS = 10V 60A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 60 ID Continuous Drain Current2 TC = 100 C 38 A IDM 240 Pulsed Drain Curren

 8.5. Size:493K  unikc
 p0903bda.pdf

P0903BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 56 ID Continuous Drain Current TC= 100 C 35 A IDM 160 Pulsed Drain Current1

 8.6. Size:475K  unikc
 p0903bva.pdf

P0903BVA N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 13A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 13 ID Continuous Drain Current TA = 70 C 10 A IDM 80 Pulsed Drain Current1 IAS Avalanche Curre

 8.7. Size:521K  unikc
 p0903bd.pdf

P0903BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 57A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 57 ID Continuous Drain Current TC= 100 C 36 A IDM 160 Pulsed Drain Current1 I

 8.8. Size:351K  unikc
 p0903bkb.pdf

P0903BKB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9m @VGS = 10V 49A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 49 ID Continuous Drain Current2 TC = 100 C 31 IDM 120 Pulsed Drain Current1

 8.9. Size:479K  unikc
 p0903bka.pdf

P0903BKA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 49A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 49 ID Continuous Drain Current3 TC = 100 C 31 IDM 120 Pulsed Drain Current

 8.10. Size:532K  unikc
 p0903bdg.pdf

P0903BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5m @VGS = 10V 25V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC= 25 C 56 ID Continuous Drain Current TC= 100 C 35 A IDM 160 Pulsed Drain Current1

 8.11. Size:465K  unikc
 p0903bdb.pdf

P0903BDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 59A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 59 ID Continuous Drain Current TC= 100 C 37 A IDM 150 Pulsed Drain Current1

 8.12. Size:316K  unikc
 p0903btg.pdf

P0903BTG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 9.5m @VGS = 10V 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 64 ID Continuous Drain Current2 TC = 100 C 40 A IDM 150 Pulsed Drain Curre

 8.13. Size:418K  unikc
 p0903bis.pdf

P0903BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5 @VGS = 10V 25V 57A TO-251(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 57 ID Continuous Drain Current TC = 100 C 36 A IDM 160 Pulsed Drain Curr