P1103BEA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P1103BEA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 264 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: PDFN3X3P

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P1103BEA datasheet

 ..1. Size:477K  unikc
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P1103BEA

P1103BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 11m @VGS = 10V 30V 37A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 37 TC = 100 C 23 ID Continuous Drain Current1,2 TA = 25 C 12 A T

 8.1. Size:312K  unikc
p1103bvg.pdf pdf_icon

P1103BEA

P1103BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 11m @VGS = 10V 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TA = 25 C 11 ID Continuous Drain Current TA = 70 C 10 A IDM 100 Pulsed Drain Current

 9.1. Size:266K  sanyo
pcp1103.pdf pdf_icon

P1103BEA

PCP1103 Ordering number ENA1346 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor PCP1103 DC / DC Converter Applications Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switch

 9.2. Size:320K  onsemi
pcp1103.pdf pdf_icon

P1103BEA

Ordering number ENA1346A PCP1103 Bipolar Transistor http //onsemi.com ( ) 30V, 1.5A, Low VCE sat PNP Single PCP Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High speed switching High allowable powe

Otros transistores... P1060ATFS, P1060ETF, P1060ETFS, P1065AT, P1065ATF, P106AAT, P1070ATF, P1070ATFS, 60N06, P1103BVG, P117AATX, P1203BD, P1203BEA, P1203BKA, P1203BV, P1203ED, P1203EEA