P1203EV Datasheet. Equivalente

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 p1203ev.pdf

P1203EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 12m @VGS = -10V -30V -10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -10 ID Continuous Drain Current TA = 70 C -8.3 A IDM -90 Pu

 0.1. Size:349K  unikc
 p1203evg.pdf

P1203EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 12m @VGS = -10V -12A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -12 ID Continuous Drain Current TA = 70 C -9 A IDM -50

 0.2. Size:826K  cn vbsemi
 p1203evg.pdf

P1203EVG www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs

 8.1. Size:904K  unikc
 p1203eea.pdf

P1203EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 12m @VGS = -10V -30V -40A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -40 TC = 100 C -25 ID Continuous Drain Current2 TA = 25

 8.2. Size:513K  unikc
 p1203ek.pdf

P1203EK P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 12m @VGS = 10V -30V -40A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -40 TC = 100 C -25 ID Continuous Drain Current TA = 25 C

 8.3. Size:585K  unikc
 p1203ed.pdf

P1203ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 12m @VGS = -10V -30V -52A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -52 ID Continuous Drain Current TC = 100 C -33 A IDM -150 Pulsed Drain C

 8.4. Size:503K  niko-sem
 p1203eea.pdf

P-Channel Logic Level Enhancement Mode P1203EEA NIKO-SEM Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G G GATE -30V 12m -40A D DRAIN S SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V G

 8.5. Size:839K  cn vbsemi
 p1203ed.pdf

P1203ED www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.011 at VGS = - 10 V 50 RoHS* - 30 COMPLIANT 0.013 at VGS = - 4.5 V 45 S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Gate