P2615ATFG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P2615ATFG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 260 nS
Cossⓘ - Capacitancia de salida: 822 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
P2615ATFG Datasheet (PDF)
p2615atfg.pdf

P2615ATFGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150V 26m @VGS = 10V 28ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20TC = 25 C28IDContinuous Drain CurrentTC = 100 C16AIDM84Pulsed Drain Curre
p2615atg.pdf

P2615ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID26m @VGS = 10V150V 53ATO-220100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 30 VTC= 25 C53IDContinuous Drain CurrentTC= 100 C34AIDM160Pulsed Drain Current1IASAvalanc
ap2615gy-hf.pdf

AP2615GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 52m Small Footprint & Low Profile Package ID -5AG RoHS Compliant & Halogen-FreeSSDDescriptionDAP2615 series are from Advanced Power innovated design and siliconGprocess technology
ap2615gey.pdf

AP2615GEY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -30VD Small Package Outline D RDS(ON) 52m Surface Mount Device ID - 5.0AGDD RoHS Compliant & Halogen-FreeSOT-26DDescriptionAP2615 series are from Advanced Power innovated design and siliconGprocess technology to
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: CJL3443 | PTA20N60 | NCEP078N10AK | ITF87052SVT | FDT439N | 2N6904 | FDU6296
History: CJL3443 | PTA20N60 | NCEP078N10AK | ITF87052SVT | FDT439N | 2N6904 | FDU6296



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