P2615ATG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P2615ATG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 178 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 53 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 381 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de P2615ATG MOSFET

- Selecciónⓘ de transistores por parámetros

 

P2615ATG datasheet

 ..1. Size:494K  unikc
p2615atg.pdf pdf_icon

P2615ATG

P2615ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 26m @VGS = 10V 150V 53A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 30 V TC= 25 C 53 ID Continuous Drain Current TC= 100 C 34 A IDM 160 Pulsed Drain Current1 IAS Avalanc

 7.1. Size:334K  unikc
p2615atfg.pdf pdf_icon

P2615ATG

P2615ATFG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 26m @VGS = 10V 28A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 TC = 25 C 28 ID Continuous Drain Current TC = 100 C 16 A IDM 84 Pulsed Drain Curre

 9.1. Size:93K  ape
ap2615gy-hf.pdf pdf_icon

P2615ATG

AP2615GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 52m Small Footprint & Low Profile Package ID -5A G RoHS Compliant & Halogen-Free S S D Description D AP2615 series are from Advanced Power innovated design and silicon G process technology

 9.2. Size:167K  ape
ap2615gey.pdf pdf_icon

P2615ATG

AP2615GEY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -30V D Small Package Outline D RDS(ON) 52m Surface Mount Device ID - 5.0A G D D RoHS Compliant & Halogen-Free SOT-26 D Description AP2615 series are from Advanced Power innovated design and silicon G process technology to

Otros transistores... P2610ADG, P2610AI, P2610ATFG, P2610ATG, P2610BD, P2610BS, P2610BT, P2615ATFG, IRLB4132, P261AFEA, P261ALV, P1810ATX, P1820AD, P1820BD, P1825AD, P1825AT, P2003BDG