P4404QVT Todos los transistores

 

P4404QVT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P4404QVT
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

P4404QVT Datasheet (PDF)

 ..1. Size:830K  unikc
 p4404qvt.pdf pdf_icon

P4404QVT

P4404QVTN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel30m @VGS =10V40V 7A N45m @VGS = -10V-40V -5A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP 20N 7TA = 25 CP -5IDContinu

 7.1. Size:844K  unikc
 p4404qv.pdf pdf_icon

P4404QVT

P4404QVN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel28m @VGS =10V40V 7A N44m @VGS = -10V-40V -5A PSOP-8ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP 20N 7TA = 25 CP -5IDContinuo

 9.1. Size:497K  unikc
 p4404etg.pdf pdf_icon

P4404QVT

P4404ETGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID44m @VGS = -10V -40V -23ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-23IDContinuous Drain CurrentTC = 100 C-15AIDM-85P

 9.2. Size:514K  unikc
 p4404edg.pdf pdf_icon

P4404QVT

P4404EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID44m @VGS = -10V-40V -20ATO-252100% UIS tested100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-20IDContinuous Drain CurrentTC = 100 C

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPB60R190C6 | FCH20N60 | VBZE50P03

 

 
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