P4404QVT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P4404QVT

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.5 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOP8

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P4404QVT datasheet

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 p4404qvt.pdf pdf_icon

P4404QVT

P4404QVT N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 30m @VGS =10V 40V 7A N 45m @VGS = -10V -40V -5A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 40 VDS Drain-Source Voltage P -40 V N 20 VGS Gate-Source Voltage P 20 N 7 TA = 25 C P -5 ID Continu

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 p4404qv.pdf pdf_icon

P4404QVT

P4404QV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 28m @VGS =10V 40V 7A N 44m @VGS = -10V -40V -5A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 40 VDS Drain-Source Voltage P -40 V N 20 VGS Gate-Source Voltage P 20 N 7 TA = 25 C P -5 ID Continuo

 9.1. Size:497K  unikc
 p4404etg.pdf pdf_icon

P4404QVT

P4404ETG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 44m @VGS = -10V -40V -23A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -23 ID Continuous Drain Current TC = 100 C -15 A IDM -85 P

 9.2. Size:514K  unikc
 p4404edg.pdf pdf_icon

P4404QVT

P4404EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 44m @VGS = -10V -40V -20A TO-252 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -20 ID Continuous Drain Current TC = 100 C

MOSTRAR MÁS

Otros transistores... P3506DT, P3506DTF, P3606BD, P3606HK, P4404EDG, P4404EI, P4404ETG, P4404QV, STP80NF70, P5002CDG, P5002CMG, P5003QVG, P5003QVT, P5010AD, P5010AS, P5010AT, P2003BE