P2003BEA Todos los transistores

 ..1. Size:341K  unikc
 p2003bea.pdf

P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 10A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TC = 25 C 28 TC = 100 C 18 ID Continuous Drain Current TA = 25 C 10 A TA =

 0.1. Size:523K  unikc
 p2003beaa.pdf

 7.1. Size:499K  unikc
 p2003be.pdf

P2003BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 7A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TJ = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 25 TC = 100 C 15 ID Continuous Drain Current TA = 25 C 7 A TA = 70

 8.1. Size:500K  unikc
 p2003bvg.pdf

P2003BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 9A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 25 TA = 25 C 9 ID Continuous Drain Current TA = 70 C 7 A IDM 32 Pulsed Drain Current1 IAS

 8.2. Size:475K  unikc
 p2003bt.pdf

P2003BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 39A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 39 ID Continuous Drain Current TC = 100 C 25 A IDM 120 Pulsed Drain Current1

 8.3. Size:468K  unikc
 p2003bdg.pdf

P2003BDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 25V 28A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC= 25 C 28 ID Continuous Drain Current TC= 100 C 18 A IDM 90 Pulsed Drai

 8.4. Size:547K  unikc
 p2003bvt.pdf

P2003BVT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 9A 100% Rg tested 100% UIS tested SOP-8 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 9 ID Continuous Drain Current TA = 70 C 7 A ID

 8.5. Size:475K  unikc
 p2003bv.pdf

P2003BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 8.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 8.5 ID Continuous Drain Current TA = 70 C 6.8 A IDM 30 Pulsed Drain Current1 IAS Avalanche Current 17