P2003EEA Todos los transistores

Introduzca al menos 3 números o letras

P2003EEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P2003EEA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 28 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 8.5 nS

Conductancia de drenaje-sustrato (Cd): 296 pF

Resistencia drenaje-fuente RDS(on): 0.02 Ohm

Empaquetado / Estuche: PDFN3X3P

Búsqueda de reemplazo de MOSFET P2003EEA

 

P2003EEA Datasheet (PDF)

1.1. p2003eea.pdf Size:530K _unikc

P2003EEA
P2003EEA

P2003EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = -10V -30V -28A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TC = 25 ° C -28 TC = 100 ° C -18 ID Continuous Drain Current2 TA = 25

1.2. p2003eeaa.pdf Size:485K _unikc

P2003EEA
P2003EEA

P2003EEAA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = -10V -30V -25A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 TC = 25 ° C -25 TC = 100 ° C -16 ID Continuous Drain Current2 TA = 2

4.1. p2003etf.pdf Size:492K _unikc

P2003EEA
P2003EEA

P2003ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = -10V -30V -26A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TC = 25 ° C -26 ID Continuous Drain Current TC = 100 ° C -16 A IDM -120 Pulsed Drai

4.2. p2003evt.pdf Size:505K _unikc

P2003EEA
P2003EEA

P2003EVT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = -10V -30V -9A 100% UIS tested SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TC = 25 ° C -9 ID Continuous Drain Current TC = 70 ° C -8 A IDM -32

4.3. p2003evg.pdf Size:491K _unikc

P2003EEA
P2003EEA

P2003EVG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = -10V -30V -9A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TA = 25 ° C -9 ID Continuous Drain Current TA = 70 ° C -7

4.4. p2003ev.pdf Size:363K _unikc

P2003EEA
P2003EEA

P2003EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = -10V -30V -9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TA = 25 ° C -9 ID Continuous Drain Current TA = 70 ° C -7 A IDM -45 Pulsed Drain Curr

4.5. p2003ed.pdf Size:457K _unikc

P2003EEA
P2003EEA

P2003ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = -10V -30V -36A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TC = 25 ° C -36 ID Continuous Drain Current TC = 100 ° C -23 A IDM -100 Pulsed Drain C

4.6. p2003ev8.pdf Size:378K _unikc

P2003EEA
P2003EEA

P2003EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 20mΩ @VGS = -10V -10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TA = 25 ° C -10 ID Continuous Drain Current TA = 70 ° C -8 A IDM -55 Pulsed Drain Cu

Otros transistores... P2003BE , P2003BEA , P2003BEAA , P2003BT , P2003BV , P2003BVG , P2003BVT , P2003ED , BUZ10 , P2003EEAA , P2003ETF , P2003EV , P2003EV8 , P2003EVG , P2003EVT , P2003HV , P2003KV .

 


P2003EEA
  P2003EEA
  P2003EEA
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLIZ44NPBF | IRLIZ44GPBF | IRLIZ34NPBF | IRLIZ34GPBF | IRLIZ24NPBF | IRLIZ14GPBF | IRLIB9343PBF | IRLIB4343 | IRLI640GPBF | IRLI630GPBF | IRLI620GPBF | IRLI540NPBF | IRLI540GPBF | IRLI540G | IRLI530GPBF |

Introduzca al menos 1 números o letras