P2003ETF Todos los transistores

 ..1. Size:492K  unikc
 p2003etf.pdf

P2003ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -26A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -26 ID Continuous Drain Current TC = 100 C -16 A IDM -120 Pulsed Drai

 8.1. Size:491K  unikc
 p2003evg.pdf

P2003EVG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -9 ID Continuous Drain Current TA = 70 C -7

 8.2. Size:378K  unikc
 p2003ev8.pdf

P2003EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 20m @VGS = -10V -10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -10 ID Continuous Drain Current TA = 70 C -8 A IDM -55 Pulsed Drain Cu

 8.3. Size:505K  unikc
 p2003evt.pdf

P2003EVT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A 100% UIS tested SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -9 ID Continuous Drain Current TC = 70 C -8 A IDM -32

 8.4. Size:457K  unikc
 p2003ed.pdf

P2003ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -36A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -36 ID Continuous Drain Current TC = 100 C -23 A IDM -100 Pulsed Drain C

 8.5. Size:530K  unikc
 p2003eea.pdf

P2003EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -28A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -28 TC = 100 C -18 ID Continuous Drain Current2 TA = 25

 8.6. Size:485K  unikc
 p2003eeaa.pdf

P2003EEAA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -25A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TC = 25 C -25 TC = 100 C -16 ID Continuous Drain Current2 TA = 2

 8.7. Size:363K  unikc
 p2003ev.pdf

P2003EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -9 ID Continuous Drain Current TA = 70 C -7 A IDM -45 Pulsed Drain Curr

 8.8. Size:312K  niko-sem
 p2003evg.pdf

P-Channel Logic Level Enhancement P2003EVG NIKO-SEM Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-Free D 4 GATE PRODUCT SUMMARY 5,6,7,8 DRAIN 1,2,3 SOURCE V(BR)DSS RDS(ON) ID G -30 20m -9A S 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Sou