P8008BV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: P8008BV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 93 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET P8008BV

P8008BV Datasheet (PDF)

..1. Size:477K unikc
p8008bv.pdf

P8008BVN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80m @VGS = 10V80V 3ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C3IDContinuous Drain Current1TA = 100 C2AIDMPulsed Drain Curr

0.1. Size:450K unikc
p8008bva.pdf

P8008BVAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID68m @VGS = 10V80V 3.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C3.5IDContinuous Drain CurrentTA = 70 C2.8AIDM14Pulsed Drain Current

0.2. Size:357K niko-sem
p8008bva.pdf

P8008BVA N-Channel Enhancement Mode SOP-8 NIKO-SEM Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80V 68m 3.5A G : GATE GD : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TA =

8.1. Size:651K unikc
p8008bd.pdf

P8008BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80m @VGS = 10V80V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TC = 25 C15IDContinuous Drain CurrentTC = 100 C10AIDM60Pulsed Drain Current1

8.2. Size:736K unikc
p8008bda.pdf

P8008BDAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID68m @VGS = 10V80V 16ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TC = 25 C16IDContinuous Drain CurrentTC = 100 C10AIDM50Pulsed Drain Current1

8.3. Size:345K niko-sem
p8008bda.pdf

N-Channel Enhancement Mode P8008BDA NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G80V 68m 16A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TC = 2

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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