P3203CMG Datasheet. Equivalente

 ..1. Size:376K  unikc
 p3203cmg.pdf

P3203CMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 32m @VGS = 4.5V 30V 6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 TA = 25 C 6 ID Continuous Drain Current2 TA = 70 A C 5 IDM 30 Pulsed Drain Current1,2

 ..2. Size:337K  niko-sem
 p3203cmg.pdf

P3203CMG N-Channel Logic Level Enhancement Mode NIKO-SEM SOT-23 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G GATE 30 32m 6A G D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V

 ..3. Size:849K  cn vbsemi
 p3203cmg.pdf

P3203CMG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

 9.1. Size:581K  supertex
 vp3203.pdf

VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP3203 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertex s well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with

 9.2. Size:357K  unikc
 p3203evg.pdf

P3203EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 32m @VGS = -10V -8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -8 ID Continuous Drain Current TA = 70 A C -7 IDM -40 Pulsed Drain Curre