PC015BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PC015BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID300m @VGS = 10V150V 6ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C6IDContinuous Drain Current2TC = 100 C4AIDM15Pulsed Drain Current1,2IASAvalanche Current 5.5

N-Channel Enhancement Mode PC015BDA NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G150V 300m 6.4A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 6.4 Continuous Drain C

PC015HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID300m @VGS = 10V150V 1.6ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20TA = 25 C1.6IDContinuous Drain CurrentTA= 70 C1.3AIDM16Pulsed Drain C

Dual N-Channel Enhancement Mode PC015HVA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 300m 150V 1.4A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TA =