PC015BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PC015BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 300m @VGS = 10V 150V 6A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 6 ID Continuous Drain Current2 TC = 100 C 4 A IDM 15 Pulsed Drain Current1,2 IAS Avalanche Current 5.5

N-Channel Enhancement Mode PC015BDA NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 150V 300m 6.4A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 6.4 Continuous Drain C

PC015HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 300m @VGS = 10V 150V 1.6A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 TA = 25 C 1.6 ID Continuous Drain Current TA= 70 C 1.3 A IDM 16 Pulsed Drain C

Dual N-Channel Enhancement Mode PC015HVA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 300m 150V 1.4A G GATE D DRAIN S SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TA =