P4004ED MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P4004ED
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 30 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 21 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 17 nC
Tiempo de subida (tr): 16 nS
Conductancia de drenaje-sustrato (Cd): 175 pF
Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET P4004ED
P4004ED Datasheet (PDF)
p4004ed.pdf
P4004EDP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID40m @VGS = -10V-21A-40VTO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40 VVGSGate-Source Voltage 20 VTC= 25 C-21IDContinuous Drain CurrentTC= 70 C-17AIDM-70Puls
irfp4004pbf.pdf
PD - 97323IRFP4004PbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS 40Vl High Speed Power SwitchingRDS(on) typ. 1.35ml Hard Switched and High Frequency Circuits max. 1.70mGID (Silicon Limited)350AcS ID (Package Limited) 195ABenefitsl Improved Gate, Avalanche and Dynamicdv/dt Rug
auirfp4004.pdf
PD - 96407AAUTOMOTIVE GRADEAUIRFP4004HEXFET Power MOSFETFeatures Advanced Process Technology VDSS 40VD Low On-ResistanceRDS(on) typ. 1.35m 175C Operating Temperature max. 1.70m Fast SwitchingGID (Silicon Limited)350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited) 195AS Automotive Qualified *DescriptionDS
irfp4004pbf.pdf
PD - 97323IRFP4004PbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS 40Vl High Speed Power SwitchingRDS(on) typ. 1.35ml Hard Switched and High Frequency Circuits max. 1.70mGID (Silicon Limited)350AcS ID (Package Limited) 195ABenefitsl Improved Gate, Avalanche and Dynamicdv/dt Rug
mxp4004bt be.pdf
MXP4004BT/BE Datasheet 40V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 40 V 4.0 m 173 AFeatures: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP4004BT TO220 MXP MXP4004BE TO263 MXP TO
mxp4004bf-bt-be.pdf
MXP4004BTMXP4004BFMXP4004BE40V N-Channel MOSFETApplications: Power Supply VDS RDS(ON)(MAX) ID DC-DC Converters 40V 3m 170A DC-AC InvertersFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number Package BrandMXP4004BT TO220 Pin Defin
mxp4004at.pdf
MXP4004AT Datasheet 40V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 40 V 4.0 m 158 A Features: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP4004AT TO220 MXP Absolute Maxim
irfp4004.pdf
isc N-Channel MOSFET Transistor IRFP4004IIRFP4004FEATURESStatic drain-source on-resistance:RDS(on)1.7mEnhancement mode:Vth =2.0 to 4.0V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyH
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