P4004ED MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: P4004ED
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET P4004ED

P4004ED Datasheet (PDF)

..1. Size:564K unikc
p4004ed.pdf

P4004EDP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID40m @VGS = -10V-21A-40VTO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40 VVGSGate-Source Voltage 20 VTC= 25 C-21IDContinuous Drain CurrentTC= 70 C-17AIDM-70Puls

9.1. Size:295K international rectifier
irfp4004pbf.pdf

PD - 97323IRFP4004PbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS 40Vl High Speed Power SwitchingRDS(on) typ. 1.35ml Hard Switched and High Frequency Circuits max. 1.70mGID (Silicon Limited)350AcS ID (Package Limited) 195ABenefitsl Improved Gate, Avalanche and Dynamicdv/dt Rug

9.2. Size:275K infineon
auirfp4004.pdf

PD - 96407AAUTOMOTIVE GRADEAUIRFP4004HEXFET Power MOSFETFeatures Advanced Process Technology VDSS 40VD Low On-ResistanceRDS(on) typ. 1.35m 175C Operating Temperature max. 1.70m Fast SwitchingGID (Silicon Limited)350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited) 195AS Automotive Qualified *DescriptionDS

9.3. Size:295K infineon
irfp4004pbf.pdf

9.4. Size:179K maxpower
mxp4004bt be.pdf

MXP4004BT/BE Datasheet 40V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 40 V 4.0 m 173 AFeatures: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP4004BT TO220 MXP MXP4004BE TO263 MXP TO

9.5. Size:305K maxpower
mxp4004bf-bt-be.pdf

MXP4004BTMXP4004BFMXP4004BE40V N-Channel MOSFETApplications: Power Supply VDS RDS(ON)(MAX) ID DC-DC Converters 40V 3m 170A DC-AC InvertersFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number Package BrandMXP4004BT TO220 Pin Defin

9.6. Size:177K maxpower
mxp4004at.pdf

MXP4004AT Datasheet 40V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 40 V 4.0 m 158 A Features: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP4004AT TO220 MXP Absolute Maxim

9.7. Size:242K inchange semiconductor
irfp4004.pdf

isc N-Channel MOSFET Transistor IRFP4004IIRFP4004FEATURESStatic drain-source on-resistance:RDS(on)1.7mEnhancement mode:Vth =2.0 to 4.0V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyH

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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