PD0903BEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD0903BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 48A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 48 TC = 100 C 30 ID Continuous Drain Current3 TA = 25 C 13 A TA

PD0903BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5m @VGS = 10V 30V 15A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 15 ID Continuous Drain Current TA = 70 C 12 A IDM 80 Pulsed Drain Current1 IAS Avalanche Current 33 EAS

PD0903BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 13A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V VGS Gate-Source Voltage 20 TA = 25 C 13 ID Continuous Drain Current TA = 70 C 10 A IDM 80 Pulsed Drain Current1 I

Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 9 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

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Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Aval

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isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Ga