P2503BDG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P2503BDG 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.5 nS
Cossⓘ - Capacitancia de salida: 175 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: TO252
📄📄 Copiar
Búsqueda de reemplazo de P2503BDG MOSFET
- Selecciónⓘ de transistores por parámetros
P2503BDG datasheet
p2503bdg.pdf
P2503BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25m @VGS = 10V 30V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 12 ID Continuous Drain Current TC = 100 C 10 A IDM 30 Pulsed Drain Current1
p2503hea.pdf
P2503HEA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 8A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 8 ID Continuous Drain Current TA = 70 C 6 A IDM 60 Pulsed Drain Cu
p2503hvg.pdf
P2503HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 25m @VGS = 10V 7A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 7 ID Continuous Drain Current2 TA = 70 C 5 A IDM 30 Pulsed Drain Current1,2
p2503nvg.pdf
P2503NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 25m @VGS =10V 30V 7A N 45m @VGS = -10V -30V -5A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 7 TA = 25 C P -5 ID Continu
Otros transistores... PM523BA, PM550BA, PM557BA, PM560BZ, PM561BA, PM597BA, PM600BZ, PM606BA, IRFB31N20D, P2503HEA, P2503HVG, P2503NVG, P2504BDG, P2504EDG, P2504EI, P2804BDG, P2804BI
History: DSU011N08N3A | DHS045N88B | PM516BA | PTA08N65
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
oc75 transistor | irfp260m | 2sc1213 | a1491 transistor | 2sc897 | 2sa818 | 2sa763 | a933
