P2503BDG Todos los transistores

 

P2503BDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P2503BDG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

P2503BDG Datasheet (PDF)

 ..1. Size:573K  unikc
p2503bdg.pdf pdf_icon

P2503BDG

P2503BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25m @VGS = 10V30V 12ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C12IDContinuous Drain CurrentTC = 100 C10AIDM30Pulsed Drain Current1

 9.1. Size:793K  unikc
p2503hea.pdf pdf_icon

P2503BDG

P2503HEADual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V30V 8APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20 TA = 25 C8IDContinuous Drain Current TA = 70 C6AIDM60Pulsed Drain Cu

 9.2. Size:323K  unikc
p2503hvg.pdf pdf_icon

P2503BDG

P2503HVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 25m @VGS = 10V 7ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C7IDContinuous Drain Current2TA = 70 C5AIDM30Pulsed Drain Current1,2

 9.3. Size:723K  unikc
p2503nvg.pdf pdf_icon

P2503BDG

P2503NVGN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel25m @VGS =10V30V 7A N45m @VGS = -10V-30V -5A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 7TA = 25 CP -5IDContinu

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BR4407 | NTP75N03-6G | FDPF5N60NZ | SFF40N30ZDB | 5N65KG-TF1-T | HGN029NE4SL | SPB80N06S2L-H5

 

 
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