P2503HEA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P2503HEA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 77 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: PDFN3X3P

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P2503HEA datasheet

 ..1. Size:793K  unikc
 p2503hea.pdf pdf_icon

P2503HEA

P2503HEA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 8A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 8 ID Continuous Drain Current TA = 70 C 6 A IDM 60 Pulsed Drain Cu

 8.1. Size:323K  unikc
 p2503hvg.pdf pdf_icon

P2503HEA

P2503HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 25m @VGS = 10V 7A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 7 ID Continuous Drain Current2 TA = 70 C 5 A IDM 30 Pulsed Drain Current1,2

 9.1. Size:723K  unikc
 p2503nvg.pdf pdf_icon

P2503HEA

P2503NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 25m @VGS =10V 30V 7A N 45m @VGS = -10V -30V -5A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 7 TA = 25 C P -5 ID Continu

 9.2. Size:573K  unikc
 p2503bdg.pdf pdf_icon

P2503HEA

P2503BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25m @VGS = 10V 30V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 12 ID Continuous Drain Current TC = 100 C 10 A IDM 30 Pulsed Drain Current1

MOSTRAR MÁS

Otros transistores... PM550BA, PM557BA, PM560BZ, PM561BA, PM597BA, PM600BZ, PM606BA, P2503BDG, STP65NF06, P2503HVG, P2503NVG, P2504BDG, P2504EDG, P2504EI, P2804BDG, P2804BI, P2804BVG