P2804BDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P2804BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m @VGS = 10V 40V 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 25 ID Continuous Drain Current TC = 100 C 16 A IDM 75 Pulsed Drain Current1 IAS Avalanche Current 26 EA

P2804BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 28m @VGS = 10V 7.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TA = 25 C 7.5 ID Continuous Drain Current TA = 70 A C 6.5 IDM 20 Pulsed Drain Current

P2804BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m @VGS = 10V 40V 33A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 33 ID Continuous Drain Current TC = 100 C 20 A IDM 120 Pulsed Drain Current1 IAS Avalanche Current 22 EA

P2804ND5G N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 28m @VGS =10V 40V 21A N 48m @VGS = -10V -40V -16A P TO-252-5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 40 VDS Drain-Source Voltage P -40 V N 20 VGS Gate-Source Voltage P 20 N 21 TC = 25 C P -16 ID

P2804NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 28m @VGS = 10V 40V 7A N 65m @VGS = -10V -40V -6A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 40 VDS Drain-Source Voltage P -40 V N 20 VGS Gate-Source Voltage P 20 N 7 TA = 25 C P -6 ID Contin

P2804HVG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m @VGS = 10V 40V 7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TA = 25 C 7 ID Continuous Drain Current TA= 70 C 6 A IDM 40 Pulsed Drain Current1

150A 40V KNX2804A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.General Features Proprietary NewTrenchTechnology R =3.0m (typ.)@V =10V DS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode 2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter 3. Pinconfiguration Pin Function 1 Gat

150A 40V N-CHANNEL MOSFET KNX2804C KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features R =3.0m (typ.)@V =10V DS(ON),typ. GS Uses CRM(CQ) advanced Trench MOS technology Excellent QgxRDS(on) product(FOM) Extremely low on-resistance RDS(on) 2. Application Motor control and drive Battery management UPS 3. Pin configuration Pin Func

150A 40V N-CHANNELMOSFET KNX2804C KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features R =3.0m (typ.)@V =10V DS(ON),typ. GS Uses CRM(CQ) advancedTrench MOStechnology Excellent QgxRDS(on) product(FOM) Extremely lowon-resistance RDS(on) 2. Application Motor control and drive Battery management UPS 3. Pinconfiguration Pin Function 1 Gate 2 Drain 3 S

P2804ND5G N- & P-Channel Enhancement Mode NIKO-SEM TO-252-5 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D1 D2 28m N-Channel 40V 21A G1 G2 G GATE 48m -16A P-Channel -40V D DRAIN S SOURCE S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channe

P2804NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 28m @VGS = 10V 40V 7A N 65m @VGS = -10V -40V -6A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 40 VDS Drain-Source Voltage P -40 V N 20 VGS Gate-Source Voltage P 20 N 7 TA = 25 C P -6 ID Contin