IRF140 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 90369 REPETITIVE AVALANCHE AND dv/dt RATED IRF140 100V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF140 100V 0.077 28A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design

isc N-Channel MOSFET Transistor IRF140 DESCRIPTION Drain Current I =27A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R =0.085 (Max) DS(on) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies UPS,AC and DC motor contr

PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 4.9m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processin

PD - 97486A AUIRF1405ZS AUTOMOTIVE GRADE AUIRF1405ZL Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D V(BR)DSS 55V l 175 C Operating Temperature l Fast Switching RDS(on) max. 4.9m G l Repetitive Avalanche Allowed up to Tjmax S ID 150A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specifically designed for

PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004 G l Lead-Free ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing tec

PD - 97691A AUTOMOTIVE GRADE AUIRF1405 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 55V l Dynamic dv/dt Rating RDS(on) typ. 4.6m l 175 C Operating Temperature l Fast Switching max 5.3m G l Fully Avalanche Rated ID (Silicon Limited) 169A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 75A l Lead-Free,

PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3m Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching R

PD -91896E IRF1404 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9m l Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ex

PD - 93907 AUTOMOTIVE MOSFET IRF1407 Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.0078 Ultra Low On-Resistance G Dynamic dv/dt Rating 175 C Operating Temperature ID = 130AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Descri

PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 55V Benefits Advanced Process Technology RDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 131A 175 C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET Power MOSFE

PD -93853B IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

PD - 96236A IRF1404ZGPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 3.7m l Halogen-Free G Description ID = 75A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low

PD -93853C IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

PD -94335 IRF1407S IRF1407L Benefits Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.0078 Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004 G l Lead-Free ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing tec

PD - 97206B IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET Power MOSFET Features l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching RDS(on) = 4.9m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET Power MOSFET utilizes the latest pro

PD - 97460 AUTOMOTIVE GRADE AUIRF1404Z AUIRF1404ZS AUIRF1404ZL Features Advanced Process Technology HEXFET Power MOSFET Low On-Resistance D V(BR)DSS 40V 175 C Operating Temperature Fast Switching RDS(on) max. 3.7m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified * S ID (Package Limited) 160A

AUTOMOTIVE GRADE AUIRF1405ZS-7P Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 4.9m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A l Automotive Qualified * S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET Power MOSFET utilizes the la

PD - 94969B IRF1405PbF Typical Applications HEXFET Power MOSFET l Industrial motor drive D VDSS = 55V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.3m l Dynamic dv/dt Rating G l 175 C Operating Temperature ID = 169A l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description D This Stripe Planar design of HEXF

PD - 95485A IRF1407PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.0078 Dynamic dv/dt Rating G 175 C Operating Temperature Fast Switching ID = 130A S Repetitive Avalanche Allowed up to Tjmax Description This Stripe Planar design of HEXFET Power MOSFETs

PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 3.7m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature V(BR)DSS 40V D l Fast Switching RDS(on) typ. 2.7m l Repetitive Avalanche Allowed up to Tjmax max. 3.7m l Lead-Free G ID (Silicon Limited) 180A Description ID (Package Limited) 120A S This HEXFET P

PD-97684 AUTOMOTIVE GRADE AUIRF1404 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l Dynamic dv/dt Rating RDS(on) typ. 3.5m l 175 C Operating Temperature max 4.0m l Fast Switching G ID (Silicon Limited) 202A l Fully Avalanche Rated S l Repetitive Avalanche Allowed ID (Package Limited) 160A up to Tjmax l Lead-Free

PD-94968B IRF1404PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.004 l Fully Avalanche Rated G l Lead-Free ID = 202A S Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

PD -94335 IRF1407S IRF1407L Benefits Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.0078 Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9m l Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ex

PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175 C Operating Temperature Fast Switching Repetitive A

PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature V(BR)DSS 40V D l Fast Switching RDS(on) typ. 2.7m l Repetitive Avalanche Allowed up to Tjmax max. 3.7m l Lead-Free G ID (Silicon Limited) 180A Description ID (Package Limited) 120A S This HEXFET P

PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 55V Benefits Advanced Process Technology RDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 131A 175 C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET Power MOSFE

AUIRF1404S AUTOMOTIVE GRADE AUIRF1404L HEXFET Power MOSFET Features Advanced Planar Technology VDSS 40V Dynamic dv/dt Rating RDS(on) typ. 3.5m 175 C Operating Temperature max. 4.0m Fast Switching ID (Silicon Limited) 162A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-F

AUIRF1404Z AUIRF1404ZS AUTOMOTIVE GRADE AUIRF1404ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) max. 3.7m 175 C Operating Temperature ID (Silicon Limited) 180A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Auto

AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed

IRF140SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 100V ID(cont) 13.9A RDS(on) 0.077 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS

DIP Type MOSFET N-Channel MOSFET IRF1404Z (KRF1404Z) TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features VDS (V) = 40V ID = 75 A (VGS = 10V) RDS(ON) 3.7m (VGS = 10V) Fast Switching 1.27 0.10 1.52 0.10 Repetitive Avalanche Allowed up to Tjmax 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54T

80V N-Channel Power MOSFET DESCRIPTION The IRF1407 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 80V,ID = 200A RDS(ON)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405Z IIRF1405Z FEATURES Static drain-source on-resistance RDS(on) 4.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404 IIRF1404 FEATURES Static drain-source on-resistance RDS(on) 4.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

isc N-Channel MOSFET Transistor IRF1407 IIRF1407 FEATURES Static drain-source on-resistance RDS(on) 7.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRF1407L FEATURES Static drain-source on-resistance RDS(on) 7.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

Isc N-Channel MOSFET Transistor IRF1404ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404Z IIRF1404Z FEATURES Static drain-source on-resistance RDS(on) 3.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

Isc N-Channel MOSFET Transistor IRF1407S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Isc N-Channel MOSFET Transistor IRF1405ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405 IIRF1405 FEATURES Static drain-source on-resistance RDS(on) 5.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM