IRF140 Todos los transistores

 

IRF140 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF140

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 28 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 59 nC

Conductancia de drenaje-sustrato (Cd): 1660 pF

Resistencia drenaje-fuente RDS(on): 0.077 Ohm

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de MOSFET IRF140

 

IRF140 Datasheet (PDF)

1.1. irf1404pbf.pdf Size:204K _update

IRF140
IRF140

PD-94968B IRF1404PbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.004Ω l Fully Avalanche Rated G l Lead-Free ID = 202A† S Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

1.2. irf1405pbf.pdf Size:258K _update

IRF140
IRF140

PD - 94969B IRF1405PbF Typical Applications HEXFET® Power MOSFET l Industrial motor drive D VDSS = 55V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.3mΩ l Dynamic dv/dt Rating G l 175°C Operating Temperature ID = 169A† l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description D This Stripe Planar design of HEXF

 1.3. irf1405lpbf irf1405spbf.pdf Size:308K _update

IRF140
IRF140

PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 55V Benefits Advanced Process Technology RDS(on) = 5.3mΩ Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 131A† 175°C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET® Power MOSFE

1.4. irf1404lpbf irf1404spbf.pdf Size:274K _update

IRF140
IRF140

PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004Ω G l Lead-Free ID = 162A† Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing tec

 1.5. irf1404zgpbf.pdf Size:286K _update

IRF140
IRF140

PD - 96236A IRF1404ZGPbF Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 3.7mΩ l Halogen-Free G Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low

1.6. irf1404zlpbf irf1404zpbf irf1404zspbf.pdf Size:298K _update

IRF140
IRF140

PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature V(BR)DSS 40V D l Fast Switching RDS(on) typ. 2.7m Ω l Repetitive Avalanche Allowed up to Tjmax max. 3.7m Ω l Lead-Free G ID (Silicon Limited) 180A Description ID (Package Limited) 120A S This HEXFET® P

1.7. irf1405zlpbf irf1405zpbf irf1405zspbf.pdf Size:396K _upd-mosfet

IRF140
IRF140

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9mΩ l Lead-Free G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ex

1.8. irf140smd.pdf Size:22K _upd-mosfet

IRF140
IRF140

IRF140SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 100V ID(cont) 13.9A RDS(on) 0.077 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

1.9. irf1407pbf.pdf Size:266K _upd-mosfet

IRF140
IRF140

PD - 95485A IRF1407PbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.0078Ω Dynamic dv/dt Rating G 175°C Operating Temperature Fast Switching ID = 130A† S Repetitive Avalanche Allowed up to Tjmax Description This Stripe Planar design of HEXFET® Power MOSFETs

1.10. irf1405zl-7ppbf irf1405zs-7ppbf.pdf Size:319K _upd-mosfet

IRF140
IRF140

PD - 97206B IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET® Power MOSFET Features l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching RDS(on) = 4.9mΩ‰ G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET® Power MOSFET utilizes the latest pro

1.11. irf140.pdf Size:227K _update-mosfet

IRF140
IRF140

isc N-Channel MOSFET Transistor IRF140 DESCRIPTION ·Drain Current I =27A@ T =25℃ D C ·Drain Source Voltage- : V = 100V(Min) DSS ·Static Drain-Source On-Resistance : R =0.085Ω(Max) DS(on) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·UPS,AC and DC motor contr

1.12. auirf1405zs-7p.pdf Size:247K _update-mosfet

IRF140
IRF140

AUTOMOTIVE GRADE AUIRF1405ZS-7P Features HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 4.9mΩ G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A l Automotive Qualified * S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET® Power MOSFET utilizes the la

1.13. auirf1404zstrl.pdf Size:362K _update-mosfet

IRF140
IRF140

PD - 97460 AUTOMOTIVE GRADE AUIRF1404Z AUIRF1404ZS AUIRF1404ZL Features Advanced Process Technology HEXFET® Power MOSFET Low On-Resistance D V(BR)DSS 40V 175°C Operating Temperature Fast Switching RDS(on) max. 3.7m Ω Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified * S ID (Package Limited) 160A

1.14. auirf1405zstrl.pdf Size:313K _update-mosfet

IRF140
IRF140

PD - 97486A AUIRF1405ZS AUTOMOTIVE GRADE AUIRF1405ZL Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D V(BR)DSS 55V l 175°C Operating Temperature l Fast Switching RDS(on) max. 4.9mΩ G l Repetitive Avalanche Allowed up to Tjmax S ID 150A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specifically designed for

1.15. irf140-1-2-3.pdf Size:364K _st2

IRF140
IRF140

1.16. irf1407.pdf Size:127K _international_rectifier

IRF140
IRF140

PD - 93907 AUTOMOTIVE MOSFET IRF1407 Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.0078? Ultra Low On-Resistance G Dynamic dv/dt Rating 175C Operating Temperature ID = 130AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description

1.17. irf1407s.pdf Size:159K _international_rectifier

IRF140
IRF140

PD -94335 IRF1407S IRF1407L Benefits Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.0078? Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ID = 1

1.18. irf1404l.pdf Size:306K _international_rectifier

IRF140
IRF140

PD -93853C IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

1.19. irf1405z.pdf Size:179K _international_rectifier

IRF140
IRF140

PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175C Operating Temperature RDS(on) = 4.9m? l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

1.20. irf140.pdf Size:144K _international_rectifier

IRF140
IRF140

PD - 90369 REPETITIVE AVALANCHE AND dv/dt RATED IRF140 100V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF140 100V 0.077? 28A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very

1.21. irf1405s.pdf Size:154K _international_rectifier

IRF140
IRF140

PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3m? Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetiti

1.22. irf1404.pdf Size:107K _international_rectifier

IRF140
IRF140

PD -91896E IRF1404 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi

1.23. irf1404z.pdf Size:181K _international_rectifier

IRF140
IRF140

PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175C Operating Temperature RDS(on) = 3.7m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

1.24. irf1405.pdf Size:116K _international_rectifier

IRF140
IRF140

PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m? Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175C Operating Temperature Fast Switching Repetitive Avalanch

1.25. irf1404s.pdf Size:139K _international_rectifier

IRF140
IRF140

PD -93853B IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

1.26. irf1407.pdf Size:245K _inchange_semiconductor

IRF140
IRF140

isc N-Channel MOSFET Transistor IRF1407,IIRF1407 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM

1.27. irf1407s.pdf Size:258K _inchange_semiconductor

IRF140
IRF140

Isc N-Channel MOSFET Transistor IRF1407S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

1.28. irf1405z.pdf Size:246K _inchange_semiconductor

IRF140
IRF140

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405Z,IIRF1405Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

1.29. irf1404zs.pdf Size:258K _inchange_semiconductor

IRF140
IRF140

Isc N-Channel MOSFET Transistor IRF1404ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

1.30. irf1405s.pdf Size:252K _inchange_semiconductor

IRF140
IRF140

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405S ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM

1.31. irf1404.pdf Size:245K _inchange_semiconductor

IRF140
IRF140

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404,IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

1.32. irf1404z.pdf Size:245K _inchange_semiconductor

IRF140
IRF140

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404Z,IIRF1404Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

1.33. irf1405.pdf Size:246K _inchange_semiconductor

IRF140
IRF140

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405, IIRF1405 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

1.34. irf1404s.pdf Size:252K _inchange_semiconductor

IRF140
IRF140

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404S ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM

1.35. irf1405zs.pdf Size:258K _inchange_semiconductor

IRF140
IRF140

Isc N-Channel MOSFET Transistor IRF1405ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

1.36. irf1404z.pdf Size:2504K _kexin

IRF140
IRF140

DIP Type MOSFET N-Channel MOSFET IRF1404Z (KRF1404Z) TO-220 9.90 ± 0.20 4.50 ± 0.20 (8.70) +0.10 ø3.60 ± 0.10 1.30 –0.05 ■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) < 3.7mΩ (VGS = 10V) ● Fast Switching 1.27 ± 0.10 1.52 ± 0.10 ● Repetitive Avalanche Allowed up to Tjmax 2 1 3 0.80 ± 0.10 +0.10 0.50 –0.05 2.40 ± 0.20 2.54TYP 2.54T

Otros transistores... IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , BSS138 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 .

 

 
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