P2806ATF Todos los transistores

 

P2806ATF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P2806ATF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 145 nS
   Cossⓘ - Capacitancia de salida: 173 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de P2806ATF MOSFET

   - Selección ⓘ de transistores por parámetros

 

P2806ATF Datasheet (PDF)

 ..1. Size:380K  unikc
 p2806atf.pdf pdf_icon

P2806ATF

P2806ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 30m @VGS = 10V 27ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C27IDContinuous Drain CurrentTC = 100 C17AIDM105Pulsed Drain Current1IASAvalanche Current 29E

 7.1. Size:345K  unikc
 p2806at.pdf pdf_icon

P2806ATF

P2806ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 30m @VGS = 10V 34ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C34IDContinuous Drain CurrentTC = 100 C21AIDM110Pulsed Drain Current1IASAvalanche Current 29EAS

 9.1. Size:478K  unikc
 p2806bv.pdf pdf_icon

P2806ATF

P2806BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID28m @VGS = 10V60V 7ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 60VVGSGate-Source Voltage 20TA = 25 C7IDContinuous Drain CurrentTA = 70 C5AIDM35Pulsed Drain Current1IAS

 9.2. Size:340K  unikc
 p2806hv.pdf pdf_icon

P2806ATF

P2806HVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 28m @VGS = 10V 6ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TA = 25 C6IDContinuous Drain CurrentTA = 70 C5AIDM30Pulsed Drain Current1IAS

MOSTRAR MÁS

Otros transistores... P2504EI , P2804BDG , P2804BI , P2804BVG , P2804HVG , P2804ND5G , P2804NVG , P2806AT , 2N7002 , P2806BD , P2806BV , P2806HV , P5102FM , P5102FM6 , P5102FMA , P5102FMNV , P5103EAG .

History: SST202 | NCE85H21TC | STD5NK50Z | UT8205AL-S08-R

 

 
Back to Top

 


 
.