P2806ATF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P2806ATF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 145 nS

Cossⓘ - Capacitancia de salida: 173 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: TO220F

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P2806ATF datasheet

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 p2806atf.pdf pdf_icon

P2806ATF

P2806ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 30m @VGS = 10V 27A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 27 ID Continuous Drain Current TC = 100 C 17 A IDM 105 Pulsed Drain Current1 IAS Avalanche Current 29 E

 7.1. Size:345K  unikc
 p2806at.pdf pdf_icon

P2806ATF

P2806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 30m @VGS = 10V 34A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 34 ID Continuous Drain Current TC = 100 C 21 A IDM 110 Pulsed Drain Current1 IAS Avalanche Current 29 EAS

 9.1. Size:478K  unikc
 p2806bv.pdf pdf_icon

P2806ATF

P2806BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m @VGS = 10V 60V 7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V VGS Gate-Source Voltage 20 TA = 25 C 7 ID Continuous Drain Current TA = 70 C 5 A IDM 35 Pulsed Drain Current1 IAS

 9.2. Size:340K  unikc
 p2806hv.pdf pdf_icon

P2806ATF

P2806HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 28m @VGS = 10V 6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TA = 25 C 6 ID Continuous Drain Current TA = 70 C 5 A IDM 30 Pulsed Drain Current1 IAS

MOSTRAR MÁS

Otros transistores... P2504EI, P2804BDG, P2804BI, P2804BVG, P2804HVG, P2804ND5G, P2804NVG, P2806AT, MMIS60R580P, P2806BD, P2806BV, P2806HV, P5102FM, P5102FM6, P5102FMA, P5102FMNV, P5103EAG