P5015BD Datasheet. Equivalente

 ..1. Size:473K  unikc
 p5015bd.pdf

P5015BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = 10V 150V 24A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 TC = 25 C 24 ID Continuous Drain Current1 TC = 100 C 15 A IDM 90 Pulsed Drain Curren

 8.1. Size:466K  unikc
 p5015btf.pdf

P5015BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = 10V 150V 18A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 Tc = 25 C 18 ID Continuous Drain Current Tc = 100 C 11 A IDM 80 Pulsed Drain Curre

 9.1. Size:50K  motorola
 tp5015re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TP5015/D The RF Line UHF Linear Power Transistor TP5015 . . . designed for 24 Volt UHF large signal common emitter amplifier applica- tions in industrial and commercial FM equipment operating in the 380 to 512 MHz frequency range, i.e., cellular radio base stations. 380 512 MHz 15 W Pout 24 V VCC 15

 9.2. Size:346K  unikc
 p5015atf.pdf

P5015ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 50m @VGS = 10V 22A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 22 ID Continuous Drain Current2 TC = 100 C 14 A IDM 90 Pulsed Drain Current1 IAS Avalanche Current 26

 9.3. Size:208K  niko-sem
 p5015cd.pdf

N-Channel Enhancement Mode P5015CD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 150V 50m 23A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 12 V TC =