P50N03LTG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P50N03LTG Datasheet (PDF)

..1. Size:490K unikc
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P50N03LTGN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID10m @VGS = 10V25V 60ATO-220ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C60IDContinuous Drain CurrentTC = 100 C38AIDM150Pulsed Drain Current1IASAvalanche

6.1. Size:111K philips
phb50n03lt phd50n03lt php50n03lt 7.pdf pdf_icon

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V)g Logic leve

8.1. Size:49K philips
php50n03t 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor PHP50N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 50 Afeatures very low on-state r

8.2. Size:177K vishay
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SUP50N03-5m1PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0051 at VGS = 10 V50d TrenchFET Power MOSFET30 21.70.0063 at VGS = 4.5 V50d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Seco