P6010DDG Todos los transistores

 

P6010DDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P6010DDG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 224 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO252

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P6010DDG Datasheet (PDF)

 ..1. Size:414K  unikc
p6010ddg.pdf

P6010DDG
P6010DDG

P6010DDGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = -10V-100V -20ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-20IDContinuous Drain CurrentTC = 100 C-12AIDM-60

 ..2. Size:414K  niko-sem
p6010ddg.pdf

P6010DDG
P6010DDG

P6010DDGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = -10V-100V -20ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-20IDContinuous Drain CurrentTC = 100 C-12AIDM-60

 8.1. Size:514K  unikc
p6010dtg.pdf

P6010DDG
P6010DDG

P6010DTGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = -10V -100V -27ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-27IDContinuous Drain CurrentTC = 100 C-17AIDM-100Pulsed Dra

 8.2. Size:386K  unikc
p6010dtfg.pdf

P6010DDG
P6010DDG

P6010DTFGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = -10V -100V -24ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-24IDContinuous Drain CurrentTC = 100 C-15AIDM-96Pulsed D

 9.1. Size:243K  maxpower
mxp6010cts.pdf

P6010DDG
P6010DDG

MXP6010CTS Datasheet60V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 60 V 10.0 m 107 A Features: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP6010CTS TO220 MXP Absolute Ma

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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