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P6010DDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P6010DDG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 224 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO252
 

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P6010DDG Datasheet (PDF)

 ..1. Size:414K  unikc
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P6010DDG

P6010DDGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = -10V-100V -20ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-20IDContinuous Drain CurrentTC = 100 C-12AIDM-60

 ..2. Size:414K  niko-sem
p6010ddg.pdf pdf_icon

P6010DDG

P6010DDGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = -10V-100V -20ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-20IDContinuous Drain CurrentTC = 100 C-12AIDM-60

 8.1. Size:514K  unikc
p6010dtg.pdf pdf_icon

P6010DDG

P6010DTGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = -10V -100V -27ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-27IDContinuous Drain CurrentTC = 100 C-17AIDM-100Pulsed Dra

 8.2. Size:386K  unikc
p6010dtfg.pdf pdf_icon

P6010DDG

P6010DTFGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = -10V -100V -24ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-24IDContinuous Drain CurrentTC = 100 C-15AIDM-96Pulsed D

Otros transistores... PV628DA , PV650BA , P6002OAG , P6003QEA , P6004ED , P6006BD , P6006BI , P6006HV , TK10A60D , P6010DTFG , P6010DTG , P6015AD , P6015AT , P6015AV , P6015CDG , P6015CSG , P6402FMG .

History: HM30N10 | NCE50NF600I | BUK9Y4R4-40E | MMIX1F360N15T2 | 2N5245 | 2N6917 | ME80N75F-G

 

 
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