PA110BL Todos los transistores

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PA110BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PA110BL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 57 pF

Resistencia drenaje-fuente RDS(on): 0.11 Ohm

Empaquetado / Estuche: SOT223

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PA110BL Datasheet (PDF)

1.1. pa110bl.pdf Size:445K _unikc

PA110BL
PA110BL

PA110BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110mΩ @VGS = 10V 100V 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TC = 25 ° C 6 ID Continuous Drain Current TA = 25 ° C 3.2 A TA = 100 ° C 2 IDM 15 Pulsed Drain Current1 IAS Aval

4.1. pa110bda.pdf Size:739K _unikc

PA110BL
PA110BL

PA110BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 105mΩ @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V TC = 25 ° C 15 ID Continuous Drain Current TC = 100 ° C 9.2 A IDM 20 Pulsed Drain Cur

4.2. pa110bc.pdf Size:771K _unikc

PA110BL
PA110BL

PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110mΩ @VGS = 10V 100V 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TA = 25 ° C 4 ID Continuous Drain Current TA = 100 ° C 3.5 A IDM 15 Pulsed Drain Current1 IAS Avalanche Current 4.8 E

4.3. pa110bd.pdf Size:411K _unikc

PA110BL
PA110BL

PA110BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110mΩ @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 TC = 25 ° C 15 ID Continuous Drain Current TC = 100 ° C 10 A IDM 60 Pulsed Drain Curren

4.4. pa110bv.pdf Size:465K _unikc

PA110BL
PA110BL

PA110BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110mΩ @VGS = 10V 100V 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V TA = 25 ° C 3.2 ID Continuous Drain Current TA = 70 ° C 2.5 A IDM 10 Pulsed Drain Curr

Otros transistores... PA004EM , PA010HK , PA102FDG , PA102FMA , PA102FMG , PA110BC , PA110BD , PA110BDA , 2SK163 , PA110BV , PA203EMG , PA210BC , PA210BL , PA210HK , PA210HV , PA210HVA , PA406EM .

 


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