PA610ATF Todos los transistores

 

PA610ATF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PA610ATF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 81 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

PA610ATF Datasheet (PDF)

 ..1. Size:532K  unikc
 pa610atf.pdf pdf_icon

PA610ATF

PA610ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID160m @VGS = 10V100V 8ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C8IDContinuous Drain CurrentTC = 100 C5.4AIDM32Pulsed Drain Current1IASAvalanche Current 8E

 8.1. Size:380K  unikc
 pa610ad.pdf pdf_icon

PA610ATF

PA610ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID160m @VGS = 10V100V 12ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C12IDContinuous Drain CurrentTC = 100 C7AIDM40Pulsed Drain Current1IASAvalanche Current 24EA

 9.1. Size:540K  unikc
 pa610dd.pdf pdf_icon

PA610ATF

PA610DDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID200m @VGS = -10V-100V -10ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 30TC = 25 C-10IDContinuous Drain CurrentTC = 100 C-8AIDM-28Pulsed Drain

 9.2. Size:370K  unikc
 pa610dtf.pdf pdf_icon

PA610ATF

PA610DTFP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID200m @VGS = -10V -100V -10ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-10IDContinuous Drain CurrentTC = 100 C-8AIDM-40Pulsed Dr

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPA70R600P7S | BUK7Y153-100E | IRLU3705Z | HAT3019R | VN2110 | UTT40P04 | IMW120R140M1H

 

 
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