PA610ATF Todos los transistores

 

PA610ATF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PA610ATF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 81 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET PA610ATF

 

PA610ATF Datasheet (PDF)

 ..1. Size:532K  unikc
pa610atf.pdf

PA610ATF
PA610ATF

PA610ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID160m @VGS = 10V100V 8ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C8IDContinuous Drain CurrentTC = 100 C5.4AIDM32Pulsed Drain Current1IASAvalanche Current 8E

 8.1. Size:380K  unikc
pa610ad.pdf

PA610ATF
PA610ATF

PA610ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID160m @VGS = 10V100V 12ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C12IDContinuous Drain CurrentTC = 100 C7AIDM40Pulsed Drain Current1IASAvalanche Current 24EA

 9.1. Size:540K  unikc
pa610dd.pdf

PA610ATF
PA610ATF

PA610DDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID200m @VGS = -10V-100V -10ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 30TC = 25 C-10IDContinuous Drain CurrentTC = 100 C-8AIDM-28Pulsed Drain

 9.2. Size:370K  unikc
pa610dtf.pdf

PA610ATF
PA610ATF

PA610DTFP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID200m @VGS = -10V -100V -10ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-10IDContinuous Drain CurrentTC = 100 C-8AIDM-40Pulsed Dr

 9.3. Size:847K  unikc
pa610nv.pdf

PA610ATF
PA610ATF

PA610NVN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel160m @VGS =10V100V 2.5A N200m @VGS = -10V-100V -2.2A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 100VDSDrain-Source VoltageP -100VN 30VGSGate-Source VoltageP 30N 2.5TA = 25 CP -2.2

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top

 


PA610ATF
  PA610ATF
  PA610ATF
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top