APM4017PU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APM4017PU
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET APM4017PU

APM4017PU Datasheet (PDF)

..1. Size:197K anpec
apm4017pu.pdf

APM4017PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-40A, RDS(ON)= 14m (typ.) @ VGS= -10VG D RDS(ON)= 20m (typ.) @ VGS= -4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)SApplications Power Management in LCD TV InverterGDP-Channel MOSFETOrdering and Marking Informatio

8.1. Size:206K anpec
apm4018nu.pdf

APM4018NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/60A,DRDS(ON)=6.5m (typ.) @ VGS=10VGRDS(ON)=9.5m (typ.) @ VGS=4.5VS Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Desktop Computer orSDC/DC ConvertersN-Channel MOSFETO

8.2. Size:200K anpec
apm4010nu.pdf

APM4010NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/57A,RDS(ON)=8.2m (typ.) @ VGS=10VG DRDS(ON)=13m (typ.) @ VGS=5VS Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHSDCompliant)ApplicationsG Power Management in LCD monitor/TV inverter.SN-Channel MOSFETOrdering and Marking

8.3. Size:202K anpec
apm4012nu.pdf

APM4012NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/55A,RDS(ON)=9m (typ.) @ VGS=10VRDS(ON)=12m (typ.) @ VGS=5V Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in LCD monitor/TV inverter.SN-Channel MOSFETOrdering and Marking Informati

8.4. Size:201K anpec
apm4015pu.pdf

APM4015PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-45A, RDS(ON)= 13m (typ.) @ VGS=-10VG D RDS(ON)= 19m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHSSCompliant)ApplicationsG Power Management in LCD TV InverterDP-Channel MOSFETOrdering and M

8.5. Size:229K anpec
apm4015k.pdf

APM4015K P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD -40V/-7.5A, DDRDS(ON)=18m (typ.) @ VGS=-10VRDS(ON)=25m (typ.) @ VGS=-4.5VSSS Super High Dense Cell DesignG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 1, 2, 3 ) (RoHS Compliant)S S SApplications(4)G Power Management in LCD TV InverterD D D D

8.6. Size:1433K kexin
apm4015pu.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET APM4015PU Typical CharacterisiticsDrain CurrentPower Dissipation60 50504040303020201010TC=25oC,VG=-10VTC=25oC0 00 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160Tj - Junction Temperature (C)Tj - Junction Temperature (C)Safe Operation AreaThermal Transient Impedance2200Duty = 0.

8.7. Size:1483K cn vbsemi
apm4010nuc.pdf

APM4010NUCwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM R

Otros transistores... APM2318A , APM3055L , APM4008NG , APM4008NU , APM4010NU , APM4012NU , APM4015K , APM4015PU , AO3400 , APM4018NU , APM4030ANU , APM4030NU , APM4034NU , APM4048ADU4 , APM4048DU4 , APM4050APU , APM4050PU .

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