APM4050APU Todos los transistores

 

APM4050APU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APM4050APU
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO252

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APM4050APU Datasheet (PDF)

 ..1. Size:201K  anpec
apm4050apu.pdf

APM4050APU
APM4050APU

APM4050APUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-25A, RDS(ON)=33m (typ.) @ VGS=-10VG D RDS(ON)=47m (typ.) @ VGS=-4.5VS Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)SApplications Inverter application in LCD Monitor/TVGDP-Channel MOSFETOrdering and Marking Informatio

 0.1. Size:1543K  cn vbsemi
apm4050apuc.pdf

APM4050APU
APM4050APU

APM4050APUCwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C,

 7.1. Size:202K  anpec
apm4050pu.pdf

APM4050APU
APM4050APU

APM4050PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-25A, RDS(ON)=33m (typ.) @ VGS=-10VG D RDS(ON)=47m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHSSCompliant)ApplicationsG Power Management in LCD/TV InverterDP-Channel MOSFETOrdering and Mar

 7.2. Size:515K  sino
apm4050bpu.pdf

APM4050APU
APM4050APU

APM4050BPU P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -40V/-25A, RDS(ON)=33m (typ.) @ VGS=-10VS RDS(ON)=59m (typ.) @ VGS=-4.5VG Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3(RoHS Compliant)SApplicationsG Power Management in LCD/TV Inverter.DP-Channel MOSFETOrdering and Marking InformationPackage

 7.3. Size:1539K  cn vbsemi
apm4050puc.pdf

APM4050APU
APM4050APU

APM4050PUCwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, u

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