APM4356KP Todos los transistores

 

APM4356KP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APM4356KP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: KPAK
     - Selección de transistores por parámetros

 

APM4356KP Datasheet (PDF)

 ..1. Size:233K  anpec
 apm4356kp.pdf pdf_icon

APM4356KP

APM4356KPN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 30V/80A,DDDDRDS(ON) = 3.3m (typ.) @ VGS = 10VSSSSRDS(ON) = 4.5m (typ.) @ VGS = 4.5VSSGG Super High Dense Cell Design Avalanche RatedTop View of KPAK Reliable and Rugged Lead Free Available (RoHS Compliant)D D D DApplicationsG Power Management in Notebook Compu

 8.1. Size:236K  anpec
 apm4358kp.pdf pdf_icon

APM4356KP

APM4358KPN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 30V/80A,DDDDRDS(ON) = 2.3m (typ.) @ VGS = 10VSSSSRDS(ON) = 4.3m (typ.) @ VGS = 4.5VSSGG Super High Dense Cell Design Avalanche RatedTop View of KPAK Reliable and Rugged Lead Free Available (RoHS Compliant)D D D DApplicationsG Power Management in Notebook Compu

 8.2. Size:240K  anpec
 apm4350kp.pdf pdf_icon

APM4356KP

APM4350KPN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 30V/60A,DDDRDS(ON) =7.5m (typ.) @ VGS = 10V DSSRDS(ON) =11.5m (typ.) @ VGS = 4.5VSSSS Super High Dense Cell Design GG Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant)D D D DApplicationsG Power Management in Notebook Computer, orDecktop Comp

 8.3. Size:229K  anpec
 apm4354kp.pdf pdf_icon

APM4356KP

APM4354KPN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 30V/70A,DDDDRDS(ON) =4.5m (typ.) @ VGS = 10VSSSSRDS(ON) =6m (typ.) @ VGS = 4.5VSSGG Super High Dense Cell Design Avalanche RatedTop View of KPAK Reliable and Rugged Lead Free Available (RoHS Compliant)D D D DApplicationsG Power Management in Notebook Computer,

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDME0106NZT | FQU8P10 | SQD100N03-3M2L | IPT026N10N5 | AONS420A60 | AP4506GEM | SSM09N90CGW

 

 
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