2SK3096 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3096
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 70 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 20 nS
Cossⓘ - Capacitancia de salida: 230 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.87 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de 2SK3096 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3096 datasheet
..1. Size:96K sanyo
2sk3096.pdf 
www.DataSheet.co.kr Ordering number EN8625 2SK3096 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3096 Applications Features Low ON-resistance. High-speed switching. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source
..2. Size:289K inchange semiconductor
2sk3096.pdf
isc N-Channel MOSFET Transistor 2SK3096 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.87 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO
8.1. Size:49K 1
2sk3093ls.pdf
Ordering number EN8622 2SK3093LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3093LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source
8.2. Size:49K 1
2sk3095ls.pdf
Ordering number EN8624 2SK3095LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3095LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source
8.3. Size:31K 1
2sk3099ls.pdf
Ordering number EN8628 2SK3099LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3099LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source
8.4. Size:209K toshiba
2sk3090.pdf
2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3090 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 16 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 1.5 3.0 V (VDS =
8.5. Size:96K sanyo
2sk3094.pdf
www.DataSheet.co.kr Ordering number EN8623 2SK3094 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3094 Applications Features High-speed switching. Low ON-resistance. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source
8.6. Size:46K sanyo
2sk3098.pdf
Ordering number EN8627 2SK3098 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3098 Applications Features Low ON-resistance. High-speed switching. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V
8.7. Size:31K sanyo
2sk3092.pdf
Ordering number ENN6788 2SK3092 N-Channel Silicon MOSFET 2SK3092 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Low Qg. 2083B [2SK3092] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP Package Dimensions unit mm 2092B [2SK3092] 6.5 2.3 5.0 0.5 4 0.
8.8. Size:286K inchange semiconductor
2sk3092d.pdf
isc N-Channel MOSFET Transistor 2SK3092D FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.9. Size:289K inchange semiconductor
2sk3094.pdf
isc N-Channel MOSFET Transistor 2SK3094 FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.10. Size:283K inchange semiconductor
2sk3090k.pdf
isc N-Channel MOSFET Transistor 2SK3090K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.11. Size:279K inchange semiconductor
2sk3093ls.pdf
isc N-Channel MOSFET Transistor 2SK3093LS FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.12. Size:279K inchange semiconductor
2sk3095ls.pdf
isc N-Channel MOSFET Transistor 2SK3095LS FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.13. Size:289K inchange semiconductor
2sk3098.pdf
isc N-Channel MOSFET Transistor 2SK3098 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.14. Size:279K inchange semiconductor
2sk3099ls.pdf
isc N-Channel MOSFET Transistor 2SK3099LS FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB
8.15. Size:354K inchange semiconductor
2sk3092i.pdf
isc N-Channel MOSFET Transistor 2SK3092I FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.16. Size:357K inchange semiconductor
2sk3090b.pdf
isc N-Channel MOSFET Transistor 2SK3090B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
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