APM4800 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APM4800
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET APM4800

APM4800 Datasheet (PDF)

..1. Size:176K anpec
apm4800.pdf

APM4800N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSO-8 30V/8A , RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=22m(typ.) @ VGS=4.5V S 1 8 D Super High Dense Cell Design for ExtremelyS 2 7 DLow RDS(ON)S 3 6 D Reliable and RuggedG 45 D SO-8 PackageTop ViewDApplications Power Manageme

8.1. Size:155K anpec
apm4804k.pdf

APM4804K N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/8A,DDDRDS(ON) = 17m(typ.) @ VGS = 10V RDS(ON) = 22m(typ.) @ VGS = 4.5VSS Super High Density Cell DesignSG Reliable and Rugged SOP - 8 SOP-8 Package D D D D Lead Free Available (RoHS Compliant) Appl

9.1. Size:206K anpec
apm4820k.pdf

APM4820KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/11A,DDRDS(ON) =12m(Typ.) @ VGS = 10VRDS(ON) =18m(Typ.) @ VGS = 4.5VSS Super High Dense Cell DesignSG Reliable and RuggedSOP-8 Lead Free and Green Devices Available(5,6,7,8)D D D D(RoHS Compliant)Applications(4) G Power Management in Notebook Computer,Portable Equipmen

9.2. Size:156K anpec
apm4835.pdf

APM4835 P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A, RDS(ON) = 16m(typ.) @ VGS = -10VS 1 8 DRDS(ON) = 24m(typ.) @ VGS = -4.5VS 2 7 D Super High Density Cell DesignS 3 6 D Reliable and RuggedG 45 D SO-8 Package SO - 8ApplicationsS S S Power Management in Notebook

9.3. Size:218K anpec
apm4828k.pdf

APM4828KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/12A,DRDS(ON) =12m(Max.) @ VGS =10VSRDS(ON) =18m(Max.) @ VGS =4.5VSS Super High Dense Cell DesignG Avalanche RatedSOP-8 Reliable and Rugged(5,6,7,8)D D D D Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management in Notebook Computer,a

9.4. Size:202K anpec
apm4812k.pdf

APM4812KN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/8A, RDS(ON)= 18m(typ.) @ VGS= 10V RDS(ON)= 26m(typ.) @ VGS= 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)Top View of SOP - 8D D D DApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredGSystemsS S SN-C

9.5. Size:185K anpec
apm4826k.pdf

APM4826KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/11A,DDRDS(ON) =9.5m(Typ.) @ VGS = 10VRDS(ON) =13.5m(Typ.) @ VGS = 4.5VSS Super High Dense Cell DesignSG Avalanche RatedSOP-8 Reliable and Rugged(5,6,7,8)D D D D Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Computer

9.6. Size:207K anpec
apm4810k.pdf

APM4810KN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/11A, RDS(ON) = 12m(typ.) @ VGS = 10V RDS(ON) =18m(typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)Top View of SOP - 8( 5,6,7,8 )D D D DApplications Power Management in Notebook Computer,(4) Portable Equipment and Battery Powered

9.7. Size:835K cn vbsemi
apm4828kc-trl.pdf

APM4828KC-TRLwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switc

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