APM4904K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APM4904K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET APM4904K

APM4904K Datasheet (PDF)

..1. Size:201K anpec
apm4904k.pdf

APM4904KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7A,RDS(ON) =22m (typ.) @ VGS = 10VRDS(ON) =26m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 SOP-8 Package Lead Free Available (RoHS Compliant)D1S1/D2(1)(2) (5)(6)(7)Applications(8)G1 Power Management in Notebook Computer,G2Portable Equ

8.1. Size:220K anpec
apm4906k.pdf

APM4906KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7A,RDS(ON) =22m (typ.) @ VGS = 10VRDS(ON) =26m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 SOP-8 Package Lead Free Available (RoHS Compliant)D1S1/D2(1)(2) (5)(6)(7)Applications(8)G1 Power Management in Notebook Computer,G2Portable Equ

9.1. Size:264K anpec
apm4953k.pdf

APM4953KDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 -30V/-4.9A ,D2D2 RDS(ON)=53m (typ.) @ VGS=-10VRDS(ON)=80m (typ.) @ VGS=-4.5VS1 Reliable and RuggedG1S2G2 ESD ProtectionTop View of SOP 8 Lead Free and Green Devices Available (RoHS Compliant)(1) (3)S1 S2Applications(2) (4)G1 G2 Power Management in Notebook Computer,Po

9.2. Size:219K anpec
apm4953.pdf

APM4953 Dual P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.9A, RDS(ON) = 53m(typ.) @ VGS = -10VS1 1 8 D1RDS(ON) = 80m(typ.) @ VGS = -4.5VG1 2 7 D1 Super High Density Cell DesignS2 3 6 D2 Reliable and RuggedG2 45 D2 SO-8 Package SO - 8Applications S1 S2 Power Managemen

9.3. Size:153K anpec
apm4947k.pdf

APM4947KDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 -30V/-2.5A ,D1D2D2RDS(ON)=90m(typ.) @ VGS=-10VRDS(ON)=145m(typ.) @ VGS=-4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP - 8 SOP-8 Package(1) (3) Lead Free Available (RoHS Compl

9.4. Size:137K anpec
apm4925k.pdf

APM4925KDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 -30V/-6.1A ,D1D2RDS(ON)=24m(typ.) @ VGS=-10V D2RDS(ON)=30m(typ.) @ VGS=-4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP - 8 SOP-8 Package Lead Free Available (RoHS Compliant)

9.5. Size:280K anpec
apm4910k.pdf

APM4910KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 130V/7A,RDS(ON) = 22m (typ.) @ VGS = 10VRDS(ON) = 26m (typ.) @ VGS = 4.5V Channel 2Top View of SOP - 830V/10A,RDS(ON) = 12m (typ.) @ VGS =10VD1S1/D2RDS(ON) = 16m (typ.) @ VGS =4.5V(1)(2) (5)(6)(7) Super High Dense Cell Design Reliable and Rugged(8)G1 Lead Free Availab

9.6. Size:148K anpec
apm4925.pdf

APM4925 P-Channel Enhancement Mode MOSFETFeaturesPin Description -30V/-6.1A, RDS(ON) = 24m(typ.) @ VGS = -10VS1 1 8 D1RDS(ON) = 30m(typ.) @ VGS = -4.5VG1 2 7 D1 Super High Density Cell DesignS2 3 6 D2 Reliable and RuggedG2 45 D2 SO-8 Package SO - 8ApplicationsS1 S2 Power Management i

9.7. Size:265K sino
apm4953k.pdf

9.8. Size:511K sino
apm4927k.pdf

APM4927K Dual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 -30V/-9A,D2RDS(ON)= 15m (typ.) @ VGS=-10VRDS(ON)= 28m (typ.) @ VGS=-4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available(1) (3) (RoHS Compliant)S1 S2Applications (2) (4)G1 G2 Power Management in MB/NB

9.9. Size:1454K cn vbsemi
apm4927kc.pdf

APM4927KCwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G

9.10. Size:850K cn vbsemi
apm4953kc.pdf

APM4953KCwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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