APM9926K Todos los transistores

 

APM9926K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APM9926K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

APM9926K Datasheet (PDF)

 ..1. Size:204K  anpec
 apm9926k.pdf pdf_icon

APM9926K

APM9926KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON) =28m (typ.) @ VGS = 4.5VRDS(ON) =38m (typ.) @ VGS = 2.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4) Power Management in Notebook Computer,G1 G2Portable Equipment and

 7.1. Size:165K  anpec
 apm9926c.pdf pdf_icon

APM9926K

APM9926/CN-Channel Enhancement Mode MOSFETFeatures Applications 20V/6A , RDS(ON)=28m(typ.) @ VGS=4.5V Power Management in Notebook Computer ,RDS(ON)=38m(typ.) @ VGS=2.5V Portable Equipment and Battery PoweredSystems. Super High Dense Cell Design for ExtremelyLow RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

 7.2. Size:203K  anpec
 apm9926ak.pdf pdf_icon

APM9926K

APM9926AKDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON) =28m (typ.) @ VGS =4.5VRDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1D2 D2Applications Power Management in Portable Equipment andBattery Powered Systems (2) (4)G1

 7.3. Size:212K  anpec
 apm9926ccg.pdf pdf_icon

APM9926K

APM9926CCGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description8 20V/5A , RDS(ON)=25m(typ.) @ VGS=4.5V765 RDS(ON)=34m(typ.) @ VGS=2.5V12 Super High Dense Cell Design34 Reliable and Rugged Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1D2 D2Applications Power Management in Notebook Computer, Por-table Equipment and Battery Powe

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IMW65R027M1H | CSD16410Q5A

 

 
Back to Top

 


 
.