APM9946J Todos los transistores

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 apm9946j.pdf

APM9946J Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/6A, RDS(ON) =38m (typ.) @ VGS = 10V RDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of DIP - 8 Lead Free Available (RoHS Compliant) (6) (5) (8) (7) D2 D2 D1 D1 Applications (2) (4) Power Management in DC/DC Converter, G1 G2 DC/AC Inverter Systems S

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 apm9946k.pdf

APM9946K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5A, RDS(ON) =38m (typ.) @ VGS = 10V RDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) Power Management in DC/DC Converter, G1 G2 DC/AC Inverter Systems. S1

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 apm9948k.pdf

APM9948K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D D 60V/4A, D D RDS(ON) = 60m (typ.) @ VGS = 10V RDS(ON) = 72m (typ.) @ VGS = 4.5V S Super High Dense Cell Design G S Reliable and Rugged G Top View of SOP - 8 Lead Free and Green Devices Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Management in DC/

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 apm9945k.pdf

APM9945K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/3A, D1 D1 D2 RDS(ON) =100m (typ.) @ VGS = 10V D2 RDS(ON) =120m (typ.) @ VGS = 4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8 (7) (8) (5) (6) D1 D1 D2 D2 App

 8.3. Size:173K  anpec
 apm9948j.pdf

APM9948J Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 D2 60V/4A, D2 RDS(ON) = 60m (typ.) @ VGS = 10V RDS(ON) = 72m (typ.) @ VGS = 4.5V S1 G1 S2 Super High Dense Cell Design G2 Reliable and Rugged Top View of DIP-8 Lead Free and Green Devices are Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Manage

 8.4. Size:1514K  cn vbsemi
 apm9945kc.pdf

APM9945KC www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channe