APM9950K Todos los transistores

 ..1. Size:232K  anpec
 apm9950k.pdf

APM9950K Dual N-Channel Enhancement Mode MOSFET Features Pin Configuration D1 D1 60V/8A, D2 D2 RDS(ON)=18.5m (typ.) @ VGS=10V RDS(ON)=26m (typ.) @ VGS=4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (8) (7) (6) (5) D1 D1 D2 D2 (RoHS Compliant) Applications (2) (4) G1 G2 Power Management i

 8.1. Size:253K  anpec
 apm9953.pdf

APM9953 P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3A , RDS(ON)=75m (typ.) @ VGS=-10V S1 1 8 D1 RDS(ON)=90m (typ.) @ VGS=-4.5V G1 2 7 D1 Super High Dense Cell Design for Extremely S2 3 6 D2 Low RDS(ON) G2 45 D2 Reliable and Rugged SOP-8 Package SO - 8 S1 S2 Applications G1 G2

 8.2. Size:138K  anpec
 apm9953k.pdf

APM9953K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 -20V/-3A , D1 D2 D2 RDS(ON)=76m (typ.) @ VGS=-10V RDS(ON)=93m (typ.) @ VGS=-4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (1) (3) S1 S2 Applicat

 9.1. Size:219K  anpec
 apm9988qa.pdf

APM9988QA Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, 8 D1 S1 1 RDS(ON)= 14m (typ.) @ VGS= 4.5V 7 D1 G1 2 RDS(ON)= 15m (typ.) @ VGS= 4V D2 S2 3 6 RDS(ON)= 17m (typ.) @ VGS= 3V G2 4 5 D2 RDS(ON)= 19m (typ.) @ VGS= 2.5V Super High Dense Cell Design Top View of DFN3x3-8A Reliable and Rugged Lead Free and Green Devices Available (8) (7)

 9.2. Size:144K  anpec
 apm9966co.pdf

APM9966CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =20m (typ.) @ VGS =4.5V RDS(ON) =25m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TSSOP - 8 (1) (8) D1 D2 Applications (5) (4) G1 G2 P

 9.3. Size:165K  anpec
 apm9926c.pdf

APM9926/C N-Channel Enhancement Mode MOSFET Features Applications 20V/6A , RDS(ON)=28m (typ.) @ VGS=4.5V Power Management in Notebook Computer , RDS(ON)=38m (typ.) @ VGS=2.5V Portable Equipment and Battery Powered Systems. Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

 9.4. Size:130K  anpec
 apm9948k.pdf

APM9948K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D D 60V/4A, D D RDS(ON) = 60m (typ.) @ VGS = 10V RDS(ON) = 72m (typ.) @ VGS = 4.5V S Super High Dense Cell Design G S Reliable and Rugged G Top View of SOP - 8 Lead Free and Green Devices Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Management in DC/

 9.5. Size:258K  anpec
 apm9934k.pdf

APM9934K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description D N-Channel D D D 20V/9A, RDS(ON) =15m (typ.) @ VGS = 4.5V S1 G1 RDS(ON) =22m (typ.) @ VGS = 2.5V S2 G2 P-Channel Top View of SOP - 8 -20V/-6A, RDS(ON) =35m (typ.) @ VGS =-4.5V (3) (8) (7) RDS(ON) =45m (typ.) @ VGS =-2.5V S2 D1 D1 Super High Dense Cell Design Reliable and Ru

 9.6. Size:153K  anpec
 apm9904k.pdf

APM9904K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 30V/8A, D1 D2 RDS(ON) =20m (typ.) @ VGS = 10V D2 RDS(ON) =25m (typ.) @ VGS = 4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8 (7) (8) (5) (6) D1 D1 D2 D2 App

 9.7. Size:202K  anpec
 apm9946k.pdf

APM9946K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5A, RDS(ON) =38m (typ.) @ VGS = 10V RDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) Power Management in DC/DC Converter, G1 G2 DC/AC Inverter Systems. S1

 9.8. Size:177K  anpec
 apm9932ck.pdf

APM9932CK Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description D N-Channel D D 20V/9A, D RDS(ON) =12m (typ.) @ VGS = 4.5V S1 RDS(ON) =18m (typ.) @ VGS = 2.5V G1 S2 G2 P-Channel -20V/-6A, Top View of SOP - 8 RDS(ON) =30m (typ.) @ VGS =-4.5V (8) (7) (6) (5) RDS(ON) =50m (typ.) @ VGS =-2.5V D1 D1 D2 D2 Super High Dens

 9.9. Size:319K  anpec
 apm9928k.pdf

APM9928 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 5 & , 20V/5A , RDS(ON)=35m (typ.) @ VGS=4.5V / % , RDS(ON)=50m (typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel -20V/-3.2A , RDS(ON)=80m (typ.) @ VGS=-4.5V SO-8 RDS(ON)=120m (typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely Low D1 D1 S2 RDS

 9.10. Size:208K  anpec
 apm9933k.pdf

APM9933K Dual P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3.4A , RDS(ON)=45m (typ.) @ VGS=-4.5V RDS(ON)=52m (typ.) @ VGS=-3V RDS(ON)=60m (typ.) @ VGS=-2.7V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (1) (3) S1 S2 Applications (2) (4) Power Management in Notebook Computer, G1 G

 9.11. Size:166K  anpec
 apm9968c.pdf

APM9968C N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=16m (typ.) @ VGS=4.5V D 1 8 D S1 2 7 S2 RDS(ON)=20m (typ.) @ VGS=2.5V S1 3 6 S2 Super High Dense Cell Design for Extremely G1 4 5 G2 Low RDS(ON) Reliable and Rugged TSSOP-8 TSSOP-8 Packages D D Applications G1 G2

 9.12. Size:193K  anpec
 apm9966.pdf

APM9966/C Dual N-Channel Enhancement Mode MOSFET Features Applications SOP-8 Power Management in Notebook Computer , 20V/6A , RDS(ON)=19m (typ.) @ VGS=4.5V Portable Equipment and Battery Powered RDS(ON)=27m (typ.) @ VGS=2.5V Systems. TSSOP-8 20V/6A , RDS(ON)=21m (typ.) @ VGS=4.5V RDS(ON)=29m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely

 9.13. Size:255K  anpec
 apm9938k.pdf

APM9938K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 N-Channel D1 D2 20V/10A, D2 RDS(ON)=13m (typ.) @ VGS=4.5V S1 RDS(ON)=22m (typ.) @ VGS=2.5V G1 S2 P-Channel G2 -20V/-6A, Top View of SOP-8 RDS(ON)=35m (typ.) @ VGS=-4.5V RDS(ON)=45m (typ.) @ VGS=-2.5V S2 D1 D1 Super High Dense Cell Design Reliable and Rugged Lead Free and

 9.14. Size:264K  anpec
 apm9936k.pdf

APM9936K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 20V/6A, RDS(ON) =27m (typ.) @ VGS = 4.5V RDS(ON) =40m (typ.) @ VGS = 2.5V P-Channel Top View of SOP - 8 -20V/-4A, RDS(ON) =60m (typ.) @ VGS =-4.5V (8) (7) (5) (6) RDS(ON) =85m (typ.) @ VGS =-2.5V D1 D1 D2 D2 Super High Dense Cell Design Reliable and Rugged Lead Free Availa

 9.15. Size:206K  anpec
 apm9984ccg.pdf

APM9984CCG N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=19m (typ.) @ VGS=2.5V Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating 2KV HBM (8) (7) (6) (5) Lead Free Available (RoHS Compliant) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Management in Notebook Computer, Portabl

 9.16. Size:203K  anpec
 apm9926ak.pdf

APM9926AK Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS =4.5V RDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Portable Equipment and Battery Powered Systems (2) (4) G1

 9.17. Size:205K  anpec
 apm9988co.pdf

APM9988CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=19m (typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating 2KV HBM Top View of TSSOP - 8 Lead Free Available (RoHS Compliant) (1) (8) D D Applications Power Management in Notebook Computer, (4) (5) G1 G2 Portable Equipment an

 9.18. Size:142K  anpec
 apm9968co.pdf

APM9968CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=20m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TSSOP-8 Packages Top View of TSSOP - 8 Lead Free Available (RoHS Compliant)

 9.19. Size:212K  anpec
 apm9926ccg.pdf

APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 8 20V/5A , RDS(ON)=25m (typ.) @ VGS=4.5V 7 6 5 RDS(ON)=34m (typ.) @ VGS=2.5V 1 2 Super High Dense Cell Design 3 4 Reliable and Rugged Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Notebook Computer, Por- table Equipment and Battery Powe

 9.20. Size:128K  anpec
 apm9922k.pdf

APM9922K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS =4.5V RDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Notebook Computer, Portable Equipment and B

 9.21. Size:204K  anpec
 apm9986co.pdf

APM9986CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=19m (typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating 2KV HBM Top View of TSSOP - 8 Lead Free Available (RoHS Compliant) (1) (8) D D Applications Power Management in Notebook Computer, (4) (5) G1 G2 Portable Equipment an

 9.22. Size:136K  anpec
 apm9935k.pdf

APM9935K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 -20V/-6A , D1 D2 D2 RDS(ON)=30m (typ.) @ VGS=-4.5V RDS(ON)=38m (typ.) @ VGS=-2.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (1) (3) S1 S2 Applica

 9.23. Size:180K  anpec
 apm9946j.pdf

APM9946J Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/6A, RDS(ON) =38m (typ.) @ VGS = 10V RDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of DIP - 8 Lead Free Available (RoHS Compliant) (6) (5) (8) (7) D2 D2 D1 D1 Applications (2) (4) Power Management in DC/DC Converter, G1 G2 DC/AC Inverter Systems S

 9.24. Size:243K  anpec
 apm9930.pdf

APM9930/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description APM9930C APM9930 N-Channel S1 1 8 D S1 1 8 D1 20V/15A, RDS(ON)=12m (typ.) @ VGS=10V G1 2 7 D G1 2 7 D1 RDS(ON)=17m (typ.) @ VGS=4.5V S2 3 6 D S2 3 6 D2 RDS(ON)=25m (typ.) @ VGS=2.5V G2 4 5 D G2 4 5 D2 P-Channel -20V/-5A, RDS(ON)=60m (typ.) @ VGS=-10V SO-8 SO-8 RDS(ON)=72m (ty

 9.25. Size:144K  anpec
 apm9933.pdf

APM9933 Dual P-Channel Enhancement Mode MOSFET Pin Description Features -20V/-3.5A , RDS(ON)=45m (typ.) @ VGS=-4.5V S1 1 8 D1 -2.9A , RDS(ON)=52m (typ.) @ VGS=-3.0V G1 2 7 D1 -2.6A , RDS(ON)=60m (typ.) @ VGS=-2.7V S2 3 6 D2 Super High Dense Cell Design for Extremely G2 45 D2 Low RDS(ON) Reliable and Rugged SOP - 8 SOP

 9.26. Size:110K  anpec
 apm9945k.pdf

APM9945K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/3A, D1 D1 D2 RDS(ON) =100m (typ.) @ VGS = 10V D2 RDS(ON) =120m (typ.) @ VGS = 4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8 (7) (8) (5) (6) D1 D1 D2 D2 App

 9.27. Size:204K  anpec
 apm9926k.pdf

APM9926K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS = 4.5V RDS(ON) =38m (typ.) @ VGS = 2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) Power Management in Notebook Computer, G1 G2 Portable Equipment and

 9.28. Size:173K  anpec
 apm9948j.pdf

APM9948J Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 D2 60V/4A, D2 RDS(ON) = 60m (typ.) @ VGS = 10V RDS(ON) = 72m (typ.) @ VGS = 4.5V S1 G1 S2 Super High Dense Cell Design G2 Reliable and Rugged Top View of DIP-8 Lead Free and Green Devices are Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Manage

 9.29. Size:180K  anpec
 apm9926.pdf

APM9926/C N-Channel Enhancement Mode MOSFET Features Applications 20V/6A , RDS(ON)=28m (typ.) @ VGS=4.5V Power Management in Notebook Computer , RDS(ON)=38m (typ.) @ VGS=2.5V Portable Equipment and Battery Powered Systems. Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

 9.30. Size:177K  anpec
 apm9966c.pdf

APM9966/C Dual N-Channel Enhancement Mode MOSFET Features Applications SOP-8 Power Management in Notebook Computer , 20V/6A , RDS(ON)=19m (typ.) @ VGS=4.5V Portable Equipment and Battery Powered RDS(ON)=27m (typ.) @ VGS=2.5V Systems. TSSOP-8 20V/6A , RDS(ON)=21m (typ.) @ VGS=4.5V RDS(ON)=29m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely

 9.31. Size:338K  anpec
 apm9928.pdf

APM9928 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 5 & , 20V/5A , RDS(ON)=35m (typ.) @ VGS=4.5V / % , RDS(ON)=50m (typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel -20V/-3.2A , RDS(ON)=80m (typ.) @ VGS=-4.5V SO-8 RDS(ON)=120m (typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely Low D1 D1 S2 RDS

 9.32. Size:268K  sino
 apm9988qb.pdf

APM9988QB Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/8A, S2 S2 RDS(ON)=17.5m (Max.) @ VGS=4.5V G2 RDS(ON)=18.5m (Max.) @ VGS=4V RDS(ON)=22m (Max.) @ VGS=3.1V S1 S1 RDS(ON)=27.5m (Max.) @ VGS=2.5V G1 Reliable and Rugged Top View of TDFN2x5-6 Lead Free and Green Devices Available (RoHS Compliant) D D (3) (4) G1 G2 Applications Power Manageme

 9.33. Size:343K  sino
 apm9988qg.pdf

APM9988QG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/8A, S2 S2 RDS(ON)= 17.5m (Max.) @ VGS=4.5V G2 RDS(ON)= 18.5m (Max.) @ VGS=4V S1 RDS(ON)= 22m (Max.) @ VGS=3.1V S1 G1 RDS(ON)= 27.5m (Max.) @ VGS=2.5V Super High Dense Cell Design Top View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices Available D D (RoHS Compliant)

 9.34. Size:300K  sino
 apm9938k.pdf

APM9938K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 D1 N-Channel D2 D2 20V/10A, RDS(ON)=13m (typ.) @ VGS=4.5V S1 RDS(ON)=22m (typ.) @ VGS=2.5V G1 S2 G2 P-Channel -20V/-6A, Top View of SOP-8 RDS(ON)=35m (typ.) @ VGS=-4.5V S2 D1 D1 RDS(ON)=45m (typ.) @ VGS=-2.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Complia

 9.35. Size:1514K  cn vbsemi
 apm9945kc.pdf

APM9945KC www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channe