APM9953K Todos los transistores

APM9953K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 -20V/-3A , D1 D2 D2 RDS(ON)=76m (typ.) @ VGS=-10V RDS(ON)=93m (typ.) @ VGS=-4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (1) (3) S1 S2 Applicat

APM9953 P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3A , RDS(ON)=75m (typ.) @ VGS=-10V S1 1 8 D1 RDS(ON)=90m (typ.) @ VGS=-4.5V G1 2 7 D1 Super High Dense Cell Design for Extremely S2 3 6 D2 Low RDS(ON) G2 45 D2 Reliable and Rugged SOP-8 Package SO - 8 S1 S2 Applications G1 G2

APM9950K Dual N-Channel Enhancement Mode MOSFET Features Pin Configuration D1 D1 60V/8A, D2 D2 RDS(ON)=18.5m (typ.) @ VGS=10V RDS(ON)=26m (typ.) @ VGS=4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (8) (7) (6) (5) D1 D1 D2 D2 (RoHS Compliant) Applications (2) (4) G1 G2 Power Management i

APM9988QA Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, 8 D1 S1 1 RDS(ON)= 14m (typ.) @ VGS= 4.5V 7 D1 G1 2 RDS(ON)= 15m (typ.) @ VGS= 4V D2 S2 3 6 RDS(ON)= 17m (typ.) @ VGS= 3V G2 4 5 D2 RDS(ON)= 19m (typ.) @ VGS= 2.5V Super High Dense Cell Design Top View of DFN3x3-8A Reliable and Rugged Lead Free and Green Devices Available (8) (7)

APM9966CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =20m (typ.) @ VGS =4.5V RDS(ON) =25m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TSSOP - 8 (1) (8) D1 D2 Applications (5) (4) G1 G2 P

APM9926/C N-Channel Enhancement Mode MOSFET Features Applications 20V/6A , RDS(ON)=28m (typ.) @ VGS=4.5V Power Management in Notebook Computer , RDS(ON)=38m (typ.) @ VGS=2.5V Portable Equipment and Battery Powered Systems. Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

APM9948K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D D 60V/4A, D D RDS(ON) = 60m (typ.) @ VGS = 10V RDS(ON) = 72m (typ.) @ VGS = 4.5V S Super High Dense Cell Design G S Reliable and Rugged G Top View of SOP - 8 Lead Free and Green Devices Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Management in DC/

APM9934K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description D N-Channel D D D 20V/9A, RDS(ON) =15m (typ.) @ VGS = 4.5V S1 G1 RDS(ON) =22m (typ.) @ VGS = 2.5V S2 G2 P-Channel Top View of SOP - 8 -20V/-6A, RDS(ON) =35m (typ.) @ VGS =-4.5V (3) (8) (7) RDS(ON) =45m (typ.) @ VGS =-2.5V S2 D1 D1 Super High Dense Cell Design Reliable and Ru

APM9904K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 30V/8A, D1 D2 RDS(ON) =20m (typ.) @ VGS = 10V D2 RDS(ON) =25m (typ.) @ VGS = 4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8 (7) (8) (5) (6) D1 D1 D2 D2 App

APM9946K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5A, RDS(ON) =38m (typ.) @ VGS = 10V RDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) Power Management in DC/DC Converter, G1 G2 DC/AC Inverter Systems. S1

APM9932CK Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description D N-Channel D D 20V/9A, D RDS(ON) =12m (typ.) @ VGS = 4.5V S1 RDS(ON) =18m (typ.) @ VGS = 2.5V G1 S2 G2 P-Channel -20V/-6A, Top View of SOP - 8 RDS(ON) =30m (typ.) @ VGS =-4.5V (8) (7) (6) (5) RDS(ON) =50m (typ.) @ VGS =-2.5V D1 D1 D2 D2 Super High Dens

APM9928 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 5 & , 20V/5A , RDS(ON)=35m (typ.) @ VGS=4.5V / % , RDS(ON)=50m (typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel -20V/-3.2A , RDS(ON)=80m (typ.) @ VGS=-4.5V SO-8 RDS(ON)=120m (typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely Low D1 D1 S2 RDS

APM9933K Dual P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3.4A , RDS(ON)=45m (typ.) @ VGS=-4.5V RDS(ON)=52m (typ.) @ VGS=-3V RDS(ON)=60m (typ.) @ VGS=-2.7V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (1) (3) S1 S2 Applications (2) (4) Power Management in Notebook Computer, G1 G

APM9968C N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=16m (typ.) @ VGS=4.5V D 1 8 D S1 2 7 S2 RDS(ON)=20m (typ.) @ VGS=2.5V S1 3 6 S2 Super High Dense Cell Design for Extremely G1 4 5 G2 Low RDS(ON) Reliable and Rugged TSSOP-8 TSSOP-8 Packages D D Applications G1 G2

APM9966/C Dual N-Channel Enhancement Mode MOSFET Features Applications SOP-8 Power Management in Notebook Computer , 20V/6A , RDS(ON)=19m (typ.) @ VGS=4.5V Portable Equipment and Battery Powered RDS(ON)=27m (typ.) @ VGS=2.5V Systems. TSSOP-8 20V/6A , RDS(ON)=21m (typ.) @ VGS=4.5V RDS(ON)=29m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely

APM9938K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 N-Channel D1 D2 20V/10A, D2 RDS(ON)=13m (typ.) @ VGS=4.5V S1 RDS(ON)=22m (typ.) @ VGS=2.5V G1 S2 P-Channel G2 -20V/-6A, Top View of SOP-8 RDS(ON)=35m (typ.) @ VGS=-4.5V RDS(ON)=45m (typ.) @ VGS=-2.5V S2 D1 D1 Super High Dense Cell Design Reliable and Rugged Lead Free and

APM9936K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 20V/6A, RDS(ON) =27m (typ.) @ VGS = 4.5V RDS(ON) =40m (typ.) @ VGS = 2.5V P-Channel Top View of SOP - 8 -20V/-4A, RDS(ON) =60m (typ.) @ VGS =-4.5V (8) (7) (5) (6) RDS(ON) =85m (typ.) @ VGS =-2.5V D1 D1 D2 D2 Super High Dense Cell Design Reliable and Rugged Lead Free Availa

APM9984CCG N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=19m (typ.) @ VGS=2.5V Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating 2KV HBM (8) (7) (6) (5) Lead Free Available (RoHS Compliant) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Management in Notebook Computer, Portabl

APM9926AK Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS =4.5V RDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Portable Equipment and Battery Powered Systems (2) (4) G1

APM9988CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=19m (typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating 2KV HBM Top View of TSSOP - 8 Lead Free Available (RoHS Compliant) (1) (8) D D Applications Power Management in Notebook Computer, (4) (5) G1 G2 Portable Equipment an

APM9968CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=20m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TSSOP-8 Packages Top View of TSSOP - 8 Lead Free Available (RoHS Compliant)

APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 8 20V/5A , RDS(ON)=25m (typ.) @ VGS=4.5V 7 6 5 RDS(ON)=34m (typ.) @ VGS=2.5V 1 2 Super High Dense Cell Design 3 4 Reliable and Rugged Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Notebook Computer, Por- table Equipment and Battery Powe

APM9922K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS =4.5V RDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Notebook Computer, Portable Equipment and B

APM9986CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=19m (typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating 2KV HBM Top View of TSSOP - 8 Lead Free Available (RoHS Compliant) (1) (8) D D Applications Power Management in Notebook Computer, (4) (5) G1 G2 Portable Equipment an

APM9935K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 -20V/-6A , D1 D2 D2 RDS(ON)=30m (typ.) @ VGS=-4.5V RDS(ON)=38m (typ.) @ VGS=-2.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (1) (3) S1 S2 Applica

APM9946J Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/6A, RDS(ON) =38m (typ.) @ VGS = 10V RDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of DIP - 8 Lead Free Available (RoHS Compliant) (6) (5) (8) (7) D2 D2 D1 D1 Applications (2) (4) Power Management in DC/DC Converter, G1 G2 DC/AC Inverter Systems S

APM9930/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description APM9930C APM9930 N-Channel S1 1 8 D S1 1 8 D1 20V/15A, RDS(ON)=12m (typ.) @ VGS=10V G1 2 7 D G1 2 7 D1 RDS(ON)=17m (typ.) @ VGS=4.5V S2 3 6 D S2 3 6 D2 RDS(ON)=25m (typ.) @ VGS=2.5V G2 4 5 D G2 4 5 D2 P-Channel -20V/-5A, RDS(ON)=60m (typ.) @ VGS=-10V SO-8 SO-8 RDS(ON)=72m (ty

APM9933 Dual P-Channel Enhancement Mode MOSFET Pin Description Features -20V/-3.5A , RDS(ON)=45m (typ.) @ VGS=-4.5V S1 1 8 D1 -2.9A , RDS(ON)=52m (typ.) @ VGS=-3.0V G1 2 7 D1 -2.6A , RDS(ON)=60m (typ.) @ VGS=-2.7V S2 3 6 D2 Super High Dense Cell Design for Extremely G2 45 D2 Low RDS(ON) Reliable and Rugged SOP - 8 SOP

APM9945K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/3A, D1 D1 D2 RDS(ON) =100m (typ.) @ VGS = 10V D2 RDS(ON) =120m (typ.) @ VGS = 4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8 (7) (8) (5) (6) D1 D1 D2 D2 App

APM9926K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS = 4.5V RDS(ON) =38m (typ.) @ VGS = 2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) Power Management in Notebook Computer, G1 G2 Portable Equipment and

APM9948J Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 D2 60V/4A, D2 RDS(ON) = 60m (typ.) @ VGS = 10V RDS(ON) = 72m (typ.) @ VGS = 4.5V S1 G1 S2 Super High Dense Cell Design G2 Reliable and Rugged Top View of DIP-8 Lead Free and Green Devices are Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Manage

APM9926/C N-Channel Enhancement Mode MOSFET Features Applications 20V/6A , RDS(ON)=28m (typ.) @ VGS=4.5V Power Management in Notebook Computer , RDS(ON)=38m (typ.) @ VGS=2.5V Portable Equipment and Battery Powered Systems. Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

APM9966/C Dual N-Channel Enhancement Mode MOSFET Features Applications SOP-8 Power Management in Notebook Computer , 20V/6A , RDS(ON)=19m (typ.) @ VGS=4.5V Portable Equipment and Battery Powered RDS(ON)=27m (typ.) @ VGS=2.5V Systems. TSSOP-8 20V/6A , RDS(ON)=21m (typ.) @ VGS=4.5V RDS(ON)=29m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely

APM9928 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 5 & , 20V/5A , RDS(ON)=35m (typ.) @ VGS=4.5V / % , RDS(ON)=50m (typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel -20V/-3.2A , RDS(ON)=80m (typ.) @ VGS=-4.5V SO-8 RDS(ON)=120m (typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely Low D1 D1 S2 RDS

APM9988QB Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/8A, S2 S2 RDS(ON)=17.5m (Max.) @ VGS=4.5V G2 RDS(ON)=18.5m (Max.) @ VGS=4V RDS(ON)=22m (Max.) @ VGS=3.1V S1 S1 RDS(ON)=27.5m (Max.) @ VGS=2.5V G1 Reliable and Rugged Top View of TDFN2x5-6 Lead Free and Green Devices Available (RoHS Compliant) D D (3) (4) G1 G2 Applications Power Manageme

APM9988QG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/8A, S2 S2 RDS(ON)= 17.5m (Max.) @ VGS=4.5V G2 RDS(ON)= 18.5m (Max.) @ VGS=4V S1 RDS(ON)= 22m (Max.) @ VGS=3.1V S1 G1 RDS(ON)= 27.5m (Max.) @ VGS=2.5V Super High Dense Cell Design Top View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices Available D D (RoHS Compliant)

APM9938K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 D1 N-Channel D2 D2 20V/10A, RDS(ON)=13m (typ.) @ VGS=4.5V S1 RDS(ON)=22m (typ.) @ VGS=2.5V G1 S2 G2 P-Channel -20V/-6A, Top View of SOP-8 RDS(ON)=35m (typ.) @ VGS=-4.5V S2 D1 D1 RDS(ON)=45m (typ.) @ VGS=-2.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Complia

APM9945KC www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channe