APM9988CO MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

APM9988CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=19m(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating : 2KV HBMTop View of TSSOP - 8 Lead Free Available (RoHS Compliant)(1) (8)D DApplications Power Management in Notebook Computer, (4) (5)G1G2Portable Equipment an

APM9988QADual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,8 D1S1 1RDS(ON)= 14m(typ.) @ VGS= 4.5V7 D1G1 2RDS(ON)= 15m(typ.) @ VGS= 4VD2S2 3 6RDS(ON)= 17m(typ.) @ VGS= 3VG2 4 5 D2RDS(ON)= 19m(typ.) @ VGS= 2.5V Super High Dense Cell Design Top View of DFN3x3-8A Reliable and Rugged Lead Free and Green Devices Available(8) (7)

APM9988QBDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/8A,S2S2RDS(ON)=17.5m (Max.) @ VGS=4.5VG2RDS(ON)=18.5m (Max.) @ VGS=4VRDS(ON)=22m (Max.) @ VGS=3.1VS1S1RDS(ON)=27.5m (Max.) @ VGS=2.5VG1 Reliable and RuggedTop View of TDFN2x5-6 Lead Free and Green Devices Available(RoHS Compliant)D D(3) (4)G1G2Applications Power Manageme

APM9988QGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/8A,S2S2RDS(ON)= 17.5m (Max.) @ VGS=4.5VG2RDS(ON)= 18.5m (Max.) @ VGS=4VS1RDS(ON)= 22m (Max.) @ VGS=3.1VS1G1RDS(ON)= 27.5m (Max.) @ VGS=2.5V Super High Dense Cell DesignTop View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices AvailableD D(RoHS Compliant)