4611 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen Tuofeng Semiconductor Technology Co., Ltd461160V Dual P + N-Channel MOSFETProduct SummaryN-Channel P-ChannelVDS (V) = 60V -60VID = 6.3A (VGS=10V) -4.9ARDS(ON)

RN4611 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4611 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Includeing two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proces

AO461160V Dual P + N-Channel MOSFETGeneral Description Product SummaryThe AO4611 uses advanced trench technology N-Channel P-ChannelMOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60Vgate charge. The complementary MOSFETs may ID = 6.3A (VGS=10V) -4.9Abe used to form a level shifted high side switch,RDS(ON)and for a host of other applications.

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4611HT MAIN CHARACTERISTICS Package I 0.5A CV 450V CEOP (TO-92) 1W C APPLICATIONS Battery charger TO-92 Electronic ballasts High frequency switching power supply

BRCS4611SC Rev.A Jul.-2020 DATA SHEET / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channelVDS(V)=60V VDS(V)=-60V ID=5.2A ID=-5.2A RDS(ON)

SMD Type MOSFETComplementary Trench MOSFET AO4611 (KO4611)SOP-8 Unit:mm Features N-Channel : VDS (V) = 60VID = 6.3 A (VGS = 10V)1.50 0.15RDS(ON) 25m (VGS = 10V)RDS(ON) 30m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -60V8 D24 G1ID = -4.9 A (VGS = -10V)RDS(ON) 42m (VGS = -10V)RDS(ON) 52m (VGS = -4.5

VBZA4611www.VBsemi.comN- and P-Channe 60V (D-S) MOSFET-FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionTyp. ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 9.0 100 % Rg and UIS TestedN-Channel6013 Compliant to RoHS Directive 2002/95/EC0.016 at VGS = 4.5 V 8.0APPLICATIONS0.041 at VGS

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . General Features N-Channel N-channel P-channelVDS = V,ID = Schematic diagram RDS(ON)

HM4611AN and P-Channel Enhancement Mode Power MOSFET Description The HM4611A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . It can be used in a wide variety of applications.General Features N-Channel N-channel P-channelVDS = 60V,ID =9.0A Schematic diagram RDS(ON)

HM4611B N and P-Channel Enhancement Mode Power MOSFET Description The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 60V,ID =6.3A RDS(ON)

FuXin Semiconductor Co., Ltd. FXN4611F Series Rev.A General Description Features The FXN4611F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 11A @V =10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus