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 ..1. Size:795K  shenzhen
 4611.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4611 60V Dual P + N-Channel MOSFET Product Summary N-Channel P-Channel VDS (V) = 60V -60V ID = 6.3A (VGS=10V) -4.9A RDS(ON)

 0.1. Size:89K  toshiba
 rn4611.pdf

RN4611 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4611 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Includeing two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proces

 0.2. Size:214K  aosemi
 ao4611.pdf

AO4611 60V Dual P + N-Channel MOSFET General Description Product Summary The AO4611 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60V gate charge. The complementary MOSFETs may ID = 6.3A (VGS=10V) -4.9A be used to form a level shifted high side switch, RDS(ON) and for a host of other applications.

 0.3. Size:595K  jilin sino
 3dd4611ht.pdf

 0.4. Size:1465K  blue-rocket-elect
 brcs4611sc.pdf

BRCS4611SC Rev.A Jul.-2020 DATA SHEET / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel VDS(V)=60V VDS(V)=-60V ID=5.2A ID=-5.2A RDS(ON)

 0.5. Size:1663K  kexin
 ao4611.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4611 (KO4611) SOP-8 Unit mm Features N-Channel VDS (V) = 60V ID = 6.3 A (VGS = 10V) 1.50 0.15 RDS(ON) 25m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 S2 5 D1 P-Channel 6 D1 2 G2 7 D2 3 S1 VDS (V) = -60V 8 D2 4 G1 ID = -4.9 A (VGS = -10V) RDS(ON) 42m (VGS = -10V) RDS(ON) 52m (VGS = -4.5

 0.6. Size:2621K  cn vbsemi
 vbza4611.pdf

VBZA4611 www.VBsemi.com N- and P-Channe 60V (D-S) MOSFET - FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition Typ. ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 9.0 100 % Rg and UIS Tested N-Channel 60 13 Compliant to RoHS Directive 2002/95/EC 0.016 at VGS = 4.5 V 8.0 APPLICATIONS 0.041 at VGS

 0.7. Size:949K  cn hmsemi
 hm4611.pdf

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . General Features N-Channel N-channel P-channel VDS = V,ID = Schematic diagram RDS(ON)

 0.8. Size:1105K  cn hmsemi
 hm4611a.pdf

HM4611A N and P-Channel Enhancement Mode Power MOSFET Description The HM4611A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . It can be used in a wide variety of applications. General Features N-Channel N-channel P-channel VDS = 60V,ID =9.0A Schematic diagram RDS(ON)

 0.9. Size:709K  cn hmsemi
 hm4611b.pdf

HM4611B N and P-Channel Enhancement Mode Power MOSFET Description The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 60V,ID =6.3A RDS(ON)

 0.10. Size:1085K  cn fx-semi
 fxn4611f.pdf

FuXin Semiconductor Co., Ltd. FXN4611F Series Rev.A General Description Features The FXN4611F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 11A @V =10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus