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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4612 Features n-channel p-channel VDS (V) = 60V -60V ID = 4.5A (VGS=10V) -3.2A (VGS = -10V) RDS(ON) RDS(ON)

PBSS4612PA 12 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5612PA. 1.2 Features and benefits

RN4612 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4612 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Includeing two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proces

EFC4612R Ordering number ENA1477A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EFC4612R Applications Features 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings

Ordering number EN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions Color TV sound output, converter, inverter. unit mm 2064 Features [2SA1768/2SC4612] Adoption of MBIT process. High breakdown voltage, large current capacity. Fast switching speed. E Emitter C Collector B Base

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AO4612 uses advanced trench technology VDS (V) = 60V -60V MOSFETs to provide excellent RDS(ON) and low gate ID = 4.5A (VGS=10V) -3.2A (VGS = -10V) charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD4612D MAIN CHARACTERISTICS Package I 1.5A C V 450V CEO P (TO-92) 1W C P (TO-126) 20W C APPLICATIONS TO-92 Battery charger TO-126 Electronic ballasts High frequency switching power

SMD Type MOSFET Complementary Trench MOSFET AO4612 (KO4612) SOP-8 Unit mm Features N-Channel VDS (V) = 60V ID = 4.5 A (VGS = 10V) 1.50 0.15 RDS(ON) 56m (VGS = 10V) RDS(ON) 77m (VGS = 4.5V) 1 S2 5 D1 P-Channel 6 D1 2 G2 7 D2 3 S1 VDS (V) = -60V 8 D2 4 G1 ID = -3.2 A (VGS = -10V) RDS(ON) 105m (VGS = -10V) RDS(ON) 135m (VGS = -4

http //www.ncepower.com NCE4612SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4612SP uses advanced trench technology to provide V =24V,I =6A SSS S excellent R , low gate charge and operation with gate SS(ON) 2.5V drive voltages as low as 2.5V while retaining a 12V V rating. It GS(MAX) Common-drain type is ES

HM4612D N and P-Channel Enhancement Mode Power MOSFET Description The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS =12V,ID =5A RDS(ON)

HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N P MOS N-CH VDS= 60V P-CH VDS= - 60V RDS(ON), Vgs@10V, Ids@4.5A = 48m RDS(ON), Vgs@-10V, Ids@-3.2A = 110m RDS(ON), Vgs@4.5V, Ids@3A = 60m RDS(ON), Vgs@-4.5V, Ids@-2.8A = 140m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistan

VS4612GE 40V/75A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 3.2 m Enhancement Mode R DS(on),TYP@ VGS=4.5V 4.9 m Very Low On-Resistance I D 75 A VitoMOS Technology PDFN3333 Fast Switching And High Efficiency Part ID Package Type Marking Packing VS4612GE PDFN3333 4612GE 5000pcs/Reel Maximum ratings, at T A=25 C, unless othe

VS4612GP 40V/80A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 3.4 m Enhancement mode R DS(on),TYP@ VGS=4.5V 5.1 m Very Low on-resistance RDS(on) I D 80 A VitoMOS Technology PDFN5x6 100% Avalanche test Part ID Package Type Marking Packing VS4612GP PDFN5x6 4612GP 3000PCS/Reel Maximum ratings, at TA =25 C, unless otherwise spe