4612 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen Tuofeng Semiconductor Technology Co., Ltd4612Featuresn-channel p-channelVDS (V) = 60V -60VID = 4.5A (VGS=10V) -3.2A (VGS = -10V)RDS(ON) RDS(ON)

PBSS4612PA12 V, 6 A NPN low VCEsat (BISS) transistorRev. 01 7 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5612PA.1.2 Features and benefits

RN4612 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4612 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Includeing two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proces

EFC4612ROrdering number : ENA1477ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4612RApplicationsFeatures 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings

Ordering number:EN3582PNP/NPN Epitaxial Planar Silicon Transistors2SA1768/2SC4612High-Voltage Switching ApplicationsApplicaitons Package Dimensions Color TV sound output, converter, inverter. unit:mm2064Features [2SA1768/2SC4612] Adoption of MBIT process. High breakdown voltage, large current capacity. Fast switching speed.E : EmitterC : CollectorB : Base

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

AO461260V Complementary Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesn-channel p-channelThe AO4612 uses advanced trench technology VDS (V) = 60V -60VMOSFETs to provide excellent RDS(ON) and low gate ID = 4.5A (VGS=10V) -3.2A (VGS = -10V)charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD4612DT/M MAIN CHARACTERISTICS Package IC 1.5AVCEO 450VPC(TO-92) 1WPC(TO-126) 20W APPLICATIONS TO-92 Battery charger TO-126 Electronic ballasts High frequency switching power supply

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4612D MAIN CHARACTERISTICS Package I 1.5A CV 450V CEOP (TO-92) 1W CP (TO-126) 20W C APPLICATIONS TO-92 Battery charger TO-126 Electronic ballasts High frequency switching power

SMD Type MOSFETComplementary Trench MOSFET AO4612 (KO4612)SOP-8 Unit:mm Features N-Channel : VDS (V) = 60VID = 4.5 A (VGS = 10V)1.50 0.15RDS(ON) 56m (VGS = 10V)RDS(ON) 77m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -60V8 D24 G1ID = -3.2 A (VGS = -10V)RDS(ON) 105m (VGS = -10V)RDS(ON) 135m (VGS = -4

http://www.ncepower.comNCE4612SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorDescription General FeaturesThe NCE4612SP uses advanced trench technology to provide V =24V,I =6ASSS Sexcellent R , low gate charge and operation with gateSS(ON) 2.5V drivevoltages as low as 2.5V while retaining a 12V V rating. ItGS(MAX) Common-drain typeis ES

HM4612DN and P-Channel Enhancement Mode Power MOSFET Description The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS =12V,ID =5A RDS(ON)

HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET NP MOS N-CH VDS= 60V P-CH VDS= - 60V RDS(ON), Vgs@10V, Ids@4.5A = 48m RDS(ON), Vgs@-10V, Ids@-3.2A = 110mRDS(ON), Vgs@4.5V, Ids@3A = 60m RDS(ON), Vgs@-4.5V, Ids@-2.8A = 140mFeatures Advanced trench process technology High Density Cell Design For Ultra Low On-Resistan

VS4612GE40V/75A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 3.2 m Enhancement ModeR DS(on),TYP@ VGS=4.5V 4.9 m Very Low On-ResistanceI D 75 A VitoMOS TechnologyPDFN3333 Fast Switching And High EfficiencyPart ID Package Type Marking PackingVS4612GE PDFN3333 4612GE 5000pcs/ReelMaximum ratings, at T A=25 C, unless othe

VS4612GP40V/80A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.4 m Enhancement modeR DS(on),TYP@ VGS=4.5V 5.1 m Very Low on-resistance RDS(on)I D 80 A VitoMOS TechnologyPDFN5x6 100% Avalanche testPart ID Package Type Marking PackingVS4612GP PDFN5x6 4612GP 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise spe