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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4616 Product Summary N-Channel P-Channel VDS= 30V -30V ID= 8A (VGS=10V) -7A (VGS=-10V) RDS(ON) RDS(ON)

IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C IC = 160A, TC = 100 C E tSC 5 s, TJ(max) = 175 C C G G VCE(on) typ. = 1.70V @ IC = 120A E Super-247 n-channel Applications Industrial Motor Drive G C E Inverters Gate Collector Emitter UPS Welding Features Benefits High efficiency in a wide range of a

IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C IC = 160A, TC = 100 C E tSC 5 s, TJ(max) = 175 C C G G VCE(on) typ. = 1.70V @ IC = 120A E Super-247 n-channel Applications Industrial Motor Drive G C E Inverters Gate Collector Emitter UPS Welding Features Benefits High efficiency in a wide range of

AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V) is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

SMD Type Transistors Silicon NPN Triple Diffused Type Transistor 2SC4616 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Large current calcity (IC=2A) High blocking voltage(VCEO 400V) 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colle

SM4616PRL N+P Complementary Power MOSFET N channel P channel General Description 30 -30 V V DS 0 14.0 23.0 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 18.0 23.0 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 10 23 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested SM4616PRL SOP8 4616 3000 Parameter Symbol Max N-chan

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channel General Features N-Channel

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channel General Features N-Channel