4616 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen Tuofeng Semiconductor Technology Co., Ltd4616Product Summary N-Channel P-ChannelVDS= 30V -30V ID= 8A (VGS=10V) -7A (VGS=-10V) RDS(ON) RDS(ON)

IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of a

IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of

AO461630V Complementary MOSFETGeneral Description Product SummaryThe AO4616 uses advanced trench technology to provide N-Channel P-Channelexcellent RDS(ON) and low gate charge. ThisVDS= 30V -30Vcomplementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V)is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

SMD Type MOSFETComplementary Trench MOSFET AO4616 (KO4616)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30VID = 8 A (VGS = 10V)1.50 0.15RDS(ON) 20m (VGS = 10V)RDS(ON) 28m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -30V8 D24 G1ID = -7 A (VGS = -10V)RDS(ON) 22m (VGS = -10V)RDS(ON) 40m (VGS = -4.5V)

SMD Type TransistorsSilicon NPN Triple Diffused Type Transistor2SC4616TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLarge current calcity (IC=2A)High blocking voltage(VCEO 400V)0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle

SM4616PRLN+P Complementary Power MOSFET N channel P channel General Description 30 -30 VV DS0 14.0 23.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 18.0 23.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 10 23 AIDTape and reel Part ID Package Type Markinginfomation100% UIS TestedSM4616PRL SOP8 4616 3000Parameter Symbol Max N-chan

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channelGeneral Features N-Channel

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channelGeneral Features N-Channel