4616 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 4616
   Código: 4616
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET 4616

4616 Datasheet (PDF)

..1. Size:1449K shenzhen
4616.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd4616Product Summary N-Channel P-ChannelVDS= 30V -30V ID= 8A (VGS=10V) -7A (VGS=-10V) RDS(ON) RDS(ON)

0.1. Size:335K international rectifier
irgps46160d.pdf

IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of a

0.2. Size:135K sanyo
2sa1773 2sc4616.pdf

0.3. Size:438K infineon
irgps46160dpbf.pdf

0.4. Size:382K aosemi
ao4616.pdf

AO461630V Complementary MOSFETGeneral Description Product SummaryThe AO4616 uses advanced trench technology to provide N-Channel P-Channelexcellent RDS(ON) and low gate charge. ThisVDS= 30V -30Vcomplementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V)is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

0.5. Size:1814K kexin
ao4616.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4616 (KO4616)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30VID = 8 A (VGS = 10V)1.50 0.15RDS(ON) 20m (VGS = 10V)RDS(ON) 28m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -30V8 D24 G1ID = -7 A (VGS = -10V)RDS(ON) 22m (VGS = -10V)RDS(ON) 40m (VGS = -4.5V)

0.6. Size:43K kexin
2sc4616.pdf

SMD Type TransistorsSilicon NPN Triple Diffused Type Transistor2SC4616TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLarge current calcity (IC=2A)High blocking voltage(VCEO 400V)0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle

0.7. Size:3388K allpower
ap4616.pdf

0.8. Size:2018K cn sps
sm4616prl.pdf

SM4616PRLN+P Complementary Power MOSFET N channel P channel General Description 30 -30 VV DS0 14.0 23.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 18.0 23.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 10 23 AIDTape and reel Part ID Package Type Markinginfomation100% UIS TestedSM4616PRL SOP8 4616 3000Parameter Symbol Max N-chan

0.9. Size:874K cn hmsemi
hm4616a.pdf

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channelGeneral Features N-Channel

0.10. Size:579K cn hmsemi
hm4616.pdf