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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4622 20V Dual P + N-Channel MOSFET Product Summary N-Channel P-Channel VDS (V) = 20V -20V ID = 6.4A (VGS=4.5V) -6.4A (VGS =-4.5V) RDS(ON) RDS(ON)

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4622 N and P-Channel Enhancement Mode Power MOSFET SOP-8 Description The 4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cu

New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0160 at VGS = 10 V 8.0e Channel-1 30 19 SkyFET Monolithic TrenchFET 0.0186 at VGS = 4.5 V 8.0e Power MOSFET and Schottky Diode 0.0264 at VGS = 10 V 8.0e

AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4622 uses advanced trench technology VDS (V) = 20V -20V MOSFETs to provide excellent RDS(ON) and low gate ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V) charge. The complementary MOSFETs may be used RDS(ON) RDS(ON) to form a level shifted high side switch, and for a

S TS 4622 S amHop Microelectronics C orp. J un, 06 2006 Dual N-Channel Enhancement Mode Field Effect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 65 @ VG S = 10V 40V 3A S OT-26 package. 85 @ VG S =4.5V D2 D1 S OT26 Top View G1 D1 6 1 S 2 2 5 S 1 G2 3 4 G2 D2 G1 S 2 S 1

SMD Type MOSFET Complementary Trench MOSFET AO4622 (KO4622) SOP-8 Unit mm Features N-Channel VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) 1.50 0.15 RDS(ON) 23m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 S1 5 D2 RDS(ON) 84m (VGS = 2.5V) 6 D2 2 G1 7 D1 3 S2 P-Channel 8 D1 4 G2 VDS (V) = -20V ID = -5 A (VGS = -4.5V) RDS(ON) 53m (VGS = -10V

SENSITRON SHD224622 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4197, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES 200 Volt, 80A, 36 milliohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Low package inductance-easy to drive and protect Add suffix S for S-100 screening MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPECIFIED. C RATING S

HM4622 N and P-Channel Enhancement Mode Power MOSFET Description The HM4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON)

VS4622DE 40V/14A Dual N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 15 m Dual N-Channel R DS(on),TYP@ VGS=4.5V 19 m Enhancement mode I D(Wire bond Limited) 14 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Dual Part ID Package Type Marking Packing VS4622DE PDFN3333 Dual 4622DE 5000pcs/Reel Maximum ratings, at T A=25 C, unless otherwis

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4622 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators Solid st