4622 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen Tuofeng Semiconductor Technology Co., Ltd462220V Dual P + N-Channel MOSFETProduct SummaryN-Channel P-ChannelVDS (V) = 20V -20VID = 6.4A (VGS=4.5V) -6.4A (VGS =-4.5V)RDS(ON) RDS(ON)

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 4622N and P-Channel Enhancement Mode Power MOSFET SOP-8Description The 4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cu

New ProductSi4622DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0160 at VGS = 10 V 8.0eChannel-1 30 19 SkyFET Monolithic TrenchFET 0.0186 at VGS = 4.5 V 8.0ePower MOSFET and Schottky Diode0.0264 at VGS = 10 V 8.0e

AO462220V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4622 uses advanced trench technology VDS (V) = 20V -20VMOSFETs to provide excellent RDS(ON) and low gateID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V)charge. The complementary MOSFETs may be usedRDS(ON) RDS(ON)to form a level shifted high side switch, and for a

S TS 4622S amHop Microelectronics C orp.J un, 06 2006Dual N-Channel Enhancement Mode Field Effect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.65 @ VG S = 10V40V 3AS OT-26 package.85 @ VG S =4.5VD2D1S OT26Top ViewG1 D161S 2 2 5 S 1G234G2 D2 G1S 2S 1

SMD Type MOSFETComplementary Trench MOSFET AO4622 (KO4622)SOP-8Unit:mm Features N-Channel : VDS (V) = 20VID = 7.3 A (VGS = 4.5V)1.50 0.15RDS(ON) 23m (VGS = 10V)RDS(ON) 30m (VGS = 4.5V)1 S1 5 D2 RDS(ON) 84m (VGS = 2.5V) 6 D22 G17 D13 S2 P-Channel : 8 D14 G2 VDS (V) = -20VID = -5 A (VGS = -4.5V)RDS(ON) 53m (VGS = -10V

SENSITRON SHD224622SEMICONDUCTORTECHNICAL DATADATA SHEET 4197, REV. -HERMETIC POWER MOSFETN-CHANNELFEATURES: 200 Volt, 80A, 36 milliohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Low package inductance-easy to drive and protect Add suffix S for S-100 screening MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPECIFIED.CRATING S

HM4622N and P-Channel Enhancement Mode Power MOSFET Description The HM4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON)

HM4622AN and P-Channel Enhancement Mode Power MOSFET Description The HM4622A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =7.5A Schematic diagram RDS(ON)

VS4622DE40V/14A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 15 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 19 m Enhancement modeI D(Wire bond Limited) 14 A 100% Avalanche Tested,100% Rg TestedPDFN3333 DualPart ID Package Type Marking PackingVS4622DE PDFN3333 Dual 4622DE 5000pcs/ReelMaximum ratings, at T A=25 C, unless otherwis

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4622DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsSolid st