4803 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 48034803Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe 4803 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) with low gate charge. This ID = -5 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

Si4803DYVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.065 at VGS = - 4.5 V - 5 TrenchFET Power MOSFET- 20 4.5 nC0.105 at VGS = - 2.5 V - 4.1 PWM Optimized, Low Qgd/Qgs RatioAPPLICATIONS Step-Down Converter for HDD Applications Portable A

WPM4803WPM4803P-Channel Enhancement Mode MOSFET DescriptionThe WPM4803 is the Dual P-Channel logic enhancement www.willsemi.commode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONNECTIONS These devices are particularly suited for low volt

AON480320V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON4803 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -3.4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

AO480330V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4803 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -5Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

AO4803A30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4803A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -5Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

BRCS4803SC Rev.D .Oct.-2018 DATA SHEET / Descriptions SOP-8 P MOS P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS(V)=-30V ID=-5.0A RDS(ON)

SM4803DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 30V/10A,D2D2 RDS(ON)= 13m (max.) @ VGS= 10V RDS(ON)= 17m (max.) @ VGS= 4.5VS1 Reliable and RuggedG1S2G2 Lead Free and Green Devices Available (RoHS Compliant)Top View of SOP-8 100% UIS TestedD1 D1 D2 D2ApplicationsG1 G2 Power Management in Notebook Computer,Portable Equi

SMD Type MOSFETDual P-Channel MOSFETAO4803 (KO4803)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 52m (VGS = -10V) RDS(ON) 87m (VGS = -4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D DD DG1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt

SMD Type MOSFETDual P-Channel MOSFETAO4803A (KO4803A)SOP-8 Unit:mm Features VDS (V) = -30V1.50 0.15 ID = -5 A (VGS = -10V) RDS(ON) 46m (VGS = -10V) RDS(ON) 74m (VGS = -4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D DD DG1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vo

Dual P-channel MOSFETELM34803AA-NGeneral description Features ELM34803AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

Dual P-channel MOSFETELM14803AB-NGeneral description Features ELM14803AB-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

STP4803STP4803STP4803STP4803Dual P Channel Enhancement Mode MOSFET-5.2ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTP4803 is the dual P-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticula

QM4803S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM4803S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 40V 26m 7.2Acharge for most of the synchronous buck converter -40V 40m -6.5Aapplications . The QM4803S meet the RoHS and Green Product

QM4803D N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM4803D is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 40V 26m 23Acharge for most of the synchronous buck converter -40V 40m -20Aapplications . The QM4803D meet the RoHS and Green Product

www.msksemi.comAO4803-MSSemiconductor CompianceProduct SummarySOP-8VDS-30VI (at V =-10V) -5AD GSR (at V =-10V)

PTS4803 -30V/-5.8A Dual P-Channel Advanced Power MOSFET Features Key Items PMOS Unit Low RDS(on) @VGS=-5V BVDSS -30 V 5V Logic Level Control ID -5.8 A Dual P-Channel SOP8 Package RDSON1@Vgs=-4.5V 50 m Pb-Free, RoHS Compliant RDSON2@vgs=-2.5V 70 m Applications The PTS4803 uses advanced trench technology to provide excellent RDS(ON) with low gate c

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 4803AP-Channel Enhancement Mode Power MOSFET SOP-8Description The 4803A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cuit

SM4803APRL-30V /-5A Dual 2P Power MOSFET C C03C C -30V /-5A Dual 2P Power MOSFET 5C03CGeneral Description -30 VV DS-30V /-5A Dual 2P Power MOSFET 51.8 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 81.4 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant -5 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

HM4803Dual P-Channel Enhancement Mode Power MOSFET Description The HM4803 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)