4803 Todos los transistores

 ..1. Size:798K  shenzhen
 4803.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4803 4803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The 4803 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) with low gate charge. This ID = -5 A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON)

 0.1. Size:96K  vishay
 si4803dy.pdf

Si4803DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.065 at VGS = - 4.5 V - 5 TrenchFET Power MOSFET - 20 4.5 nC 0.105 at VGS = - 2.5 V - 4.1 PWM Optimized, Low Qgd/Qgs Ratio APPLICATIONS Step-Down Converter for HDD Applications Portable A

 0.2. Size:764K  willsemi
 wpm4803.pdf

WPM4803 WPM4803 P-Channel Enhancement Mode MOSFET Description The WPM4803 is the Dual P-Channel logic enhancement www.willsemi.com mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONNECTIONS These devices are particularly suited for low volt

 0.3. Size:308K  aosemi
 aon4803.pdf

AON4803 20V Dual P-Channel MOSFET General Description Product Summary VDS -20V The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -3.4A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 0.4. Size:609K  aosemi
 ao4803.pdf

AO4803 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -5A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

 0.5. Size:608K  aosemi
 ao4803a.pdf

AO4803A 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4803A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -5A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 0.6. Size:1265K  blue-rocket-elect
 brcs4803sc.pdf

BRCS4803SC Rev.D .Oct.-2018 DATA SHEET / Descriptions SOP-8 P MOS P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS(V)=-30V ID=-5.0A RDS(ON)

 0.7. Size:265K  sino
 sm4803dsk.pdf

SM4803DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 30V/10A, D2 D2 RDS(ON)= 13m (max.) @ VGS= 10V RDS(ON)= 17m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equi

 0.8. Size:1813K  kexin
 ao4803.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO4803 (KO4803) SOP-8 Unit mm Features VDS (V) = -30V ID = -5 A (VGS = -10V) 1.50 0.15 RDS(ON) 52m (VGS = -10V) RDS(ON) 87m (VGS = -4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D D D G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volt

 0.9. Size:2058K  kexin
 ao4803a.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO4803A (KO4803A) SOP-8 Unit mm Features VDS (V) = -30V 1.50 0.15 ID = -5 A (VGS = -10V) RDS(ON) 46m (VGS = -10V) RDS(ON) 74m (VGS = -4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D D D G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Vo

 0.10. Size:1071K  elm
 elm34803aa-n.pdf

Dual P-channel MOSFET ELM34803AA-N General description Features ELM34803AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 0.11. Size:1111K  elm
 elm14803ab.pdf

Dual P-channel MOSFET ELM14803AB-N General description Features ELM14803AB-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

 0.12. Size:688K  stansontech
 stp4803.pdf

STP4803 STP4803 STP4803 STP4803 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particula

 0.13. Size:401K  ubiq
 qm4803s.pdf

QM4803S N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM4803S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 40V 26m 7.2A charge for most of the synchronous buck converter -40V 40m -6.5A applications . The QM4803S meet the RoHS and Green Product

 0.14. Size:363K  ubiq
 qm4803d.pdf

QM4803D N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM4803D is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 40V 26m 23A charge for most of the synchronous buck converter -40V 40m -20A applications . The QM4803D meet the RoHS and Green Product

 0.15. Size:1267K  msksemi
 ao4803-ms.pdf

www.msksemi.com AO4803-MS Semiconductor Compiance Product Summary SOP-8 VDS -30V I (at V =-10V) -5A D GS R (at V =-10V)

 0.16. Size:600K  cn puolop
 pts4803.pdf

PTS4803 -30V/-5.8A Dual P-Channel Advanced Power MOSFET Features Key Items PMOS Unit Low RDS(on) @VGS=-5V BVDSS -30 V 5V Logic Level Control ID -5.8 A Dual P-Channel SOP8 Package RDSON1@Vgs=-4.5V 50 m Pb-Free, RoHS Compliant RDSON2@vgs=-2.5V 70 m Applications The PTS4803 uses advanced trench technology to provide excellent RDS(ON) with low gate c

 0.17. Size:3445K  cn tuofeng
 4803a.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4803A P-Channel Enhancement Mode Power MOSFET SOP-8 Description The 4803A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cuit

 0.18. Size:595K  cn sps
 sm4803aprl.pdf

SM4803APRL -30V /-5A Dual 2P Power MOSFET C C03C C -30V /-5A Dual 2P Power MOSFET 5C03C General Description -30 V V DS -30V /-5A Dual 2P Power MOSFET 51.8 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 81.4 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant -5 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested

 0.19. Size:548K  cn hmsemi
 hm4803 sop8.pdf

HM4803 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4803 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)