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 ..1. Size:1379K  shenzhen
 4835.pdf

Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-8A, RDS(ON) = 16m (typ.) @ VGS = -10V S 1 8 D RDS(ON) = 24m (typ.) @ VGS = -4.5V S 2 7 D Super High Density Cell Design S 3 6 D Reliable and Rugged G 45 D SO-8 Package SO - 8 Appli

 0.1. Size:65K  vishay
 si4835dy 2.pdf

Si4835DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.019 @ VGS = -10 V -8.0 -30 30 0.033 @ VGS = -4.5 V -6.0 S S S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D D D D Ordering Information Si4835DY Si4835DY-T1 (with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbo

 0.2. Size:68K  vishay
 si4835bdy.pdf

Si4835BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) Qg (Typ) D Advanced High Cell Density Process D 100% Rg Tested 0.018 @ VGS = -10 V -9.6 -30 -30 -25 -25 APPLICATIONS 0.030 @ VGS = -4.5 V -7.5 D Load Switches - Notebook PCs - Desktop PCs S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top Vie

 0.3. Size:236K  vishay
 si4835dd.pdf

New Product Si4835DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.018 at VGS = - 10 V - 13 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.030 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches - Notebook PCs - Des

 0.4. Size:239K  vishay
 si4835ddy.pdf

New Product Si4835DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.018 at VGS = - 10 V - 13 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.030 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches - Notebook PCs - Des

 0.5. Size:48K  vishay
 si4835dy.pdf

Si4835DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.019 @ VGS = -10 V -8.0 -30 30 0.033 @ VGS = -4.5 V -6.0 S S S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D D D D Ordering Information Si4835DY Si4835DY-T1 (with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbo

 0.6. Size:136K  onsemi
 ntmfs4835nt1g.pdf

NTMFS4835N Power MOSFET 30 V, 104 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 104 A CPU Po

 0.7. Size:136K  onsemi
 ntmfs4835n.pdf

NTMFS4835N Power MOSFET 30 V, 104 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 104 A CPU P

 0.8. Size:37K  panasonic
 2sc4835.pdf

Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25 C) 0

 0.9. Size:41K  panasonic
 2sc4835 e.pdf

Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25 C) 0

 0.10. Size:104K  ald
 ald114835 ald114935.pdf

TM ADVANCED EPAD LINEAR DEVICES, INC. ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD VGS(th)= -3.50V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are monolithic quad/dual depletion mode N-Channel Functional replacement of Form B (NC) relay MOSFETs matched at the factory using ALD s proven EPAD CMOS technol- Zero power fail

 0.11. Size:614K  secos
 ssg4835p.pdf

SSG4835P -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power ma

 0.12. Size:179K  taiwansemi
 tsm4835cs.pdf

Preliminary TSM4835 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Source 18 @ VGS = -10V -9.6 4. Gate -30 30 @ VGS = -4.5V -7.5 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switche

 0.13. Size:206K  ape
 ap4835gm.pdf

AP4835GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 20m D Fast Switching ID -9.2A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-re

 0.14. Size:91K  ape
 ap4835gm-hf.pdf

AP4835GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 20m D Fast Switching ID -9.2A G RoHS Compliant S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

 0.15. Size:94K  ape
 ap4835gmt-hf.pdf

AP4835GMT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V SO-8 Compatible RDS(ON) 21m Low On-resistance ID -32A G RoHS Compliant & Halogen-Free S D D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 0.16. Size:320K  analog power
 am4835p.pdf

Analog Power AM4835P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 19 @ VGS = -10V -9.5 Low thermal impedance -30 30 @ VGS = -4.5V -7.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 0.17. Size:246K  analog power
 am4835ep.pdf

Analog Power AM4835EP P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 19 @ VGS = -10V -9.5 -30 converters and power management in portable and 30 @ VGS = -4.5V -7.5

 0.18. Size:363K  cystek
 mtp4835v8.pdf

Spec. No. C830V8 Issued Date 2013.01.23 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP4835V8 ID -33A 16m (typ.) RDSON(MAX)@VGS=-10V, ID=-10A 25m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-7A Description The MTP4835V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

 0.19. Size:335K  cystek
 mtp4835l3.pdf

Spec. No. C830L3 Issued Date 2013.02.01 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTP4835L3 BVDSS -30V ID -10A 21m (typ) RDSON@VGS=-10V, ID=-10A 28m (typ) RDSON@VGS=-5V, ID=-7A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalen

 0.20. Size:305K  cystek
 mtp4835aq8.pdf

Spec. No. C830Q8 Issued Date 2012.09.19 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4835AQ8 ID -10A RDSON@VGS=-10V, ID=-10A 18m (typ) RDSON@VGS=-4.5V,ID=-6A 27m (typ) Description The MTP4835AQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

 0.21. Size:301K  cystek
 mtp4835q8.pdf

Spec. No. C830Q8 Issued Date 2012.06.22 CYStech Electronics Corp. Revised Date Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4835Q8 ID -10A RDSON@VGS=-10V, ID=-10A 17m (typ) RDSON@VGS=-4.5V,ID=-6A 26m (typ) Description The MTP4835Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, rug

 0.22. Size:156K  anpec
 apm4835.pdf

APM4835 P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-8A, RDS(ON) = 16m (typ.) @ VGS = -10V S 1 8 D RDS(ON) = 24m (typ.) @ VGS = -4.5V S 2 7 D Super High Density Cell Design S 3 6 D Reliable and Rugged G 45 D SO-8 Package SO - 8 Applications S S S Power Management in Notebook

 0.23. Size:155K  silicon standard
 ssm4835m.pdf

SSM4835M P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement BVDSS -30V D D Low on-resistance D RDS(ON) 20m D Fast switching ID -8A G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The SO-8 package is widely p

 0.24. Size:1779K  cn vbsemi
 am4835p.pdf

AM4835P www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G

 0.25. Size:1430K  cn vbsemi
 si4835ddy.pdf

SI4835DDY www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PC