4946 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen TuoFeng Semiconductor Technology co., LTD4946Dual N-Channel High Density Trench MOSFETPRODUCT SUMMARY FEATURESVDSS ID RDS(on) (m) Max Super high dense cell trench design for low RDS(on).5.0A 52 @ VGSP = 10V Rugged and reliable.60V4.0A 75 @ VGSP = 4.5V Surface Mount package.D1 D2SOP-8S1 1 8 D12G1 7 D13 6S2 D2G1 G24 5G2 D2S1 S2ABSOLUTE MA

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 4946N-Channel Enhancement Mode Power MOSFET SOP-81 8S2 D2Description 2 7G2 D2The 4946 uses advanced trench technology to provide 3 6S1 D14 5G1 D1excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side Equivalent Cir cuitswit

Si4946BEYVishay SiliconixDual N-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET60 9.2 nC0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9

SQ4946AEYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.040 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.055 Material categorization:For definitions of compliance please seeID (A) per leg 7www.vishay.com/d

Si4946EYVishay SiliconixDual N-Channel 60-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Maximum Junction TemperatureD 100% Rg Tested0.055 @ VGS = 10 V 4.5 Pb-freeAvailable60600.075 @ VGS = 4.5 V 3.9SO-8DS1 1 D18G1 2 D17S2 3 D26GG2 4 D25Top ViewSOrdering Information: Si4946EYSi4946EY-

Si4946BEYVishay SiliconixDual N-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET60 9.2 nC0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9

SQ4946EYVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60Pb-free Package with Low Thermal ResistanceAvailableRDS(on) () at VGS = 10 V 0.055RoHS*ID (A) 4.5AEC-Q101 RELIABILITYCOMPLIANTConfiguration Dual Passed all AEC-Q101 Reliability Testing Characterization OngoingD1

Si4946CDYwww.vishay.comVishay SiliconixDual N-Channel 60 V (D-S) MOSFETFEATURESSO-8 DualD2 TrenchFET power MOSFETD2 5D1 6 100 % Rg testedD17 Material categorization: 8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONSG233S2S222 DC/DC converterG1 D1 D2G11 Load switchS1Top View Inve

NTMFS4946NPower MOSFET30 V, 100 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delivery30 V

TSM4946D 60V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 55 @ VGS = 10V 4.5 60 4. Gate 2 5. Drain 2 75 @ VGS = 4.5V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati

Spec. No. : MOS200808 HI-SINCERITY Issued Date : 2008.11.12 Revised Date :2009,03,05 MICROELECTRONICS CORP. Page No. : 1/5 8-Lead Plastic DIP-8H4946 Series Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A) 8 Features 7 6 5 8-Lead Plastic SO-8 RDS(on)

AFN4946W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=48m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

AFN4946 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

AFN4946BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=65m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

SMD Type MOSFETDual N-Channel MOSFETSI4946DY (KI4946DY)SOP-8 Features VDS (V) = 60V1.50 0.15 ID = 6.5 A (VGS = 10V) RDS(ON) 41m (VGS = 10V) RDS(ON) 52m (VGS = 4.5V)1 Source1 5 Drain26 Drain22 Gate1 175 C Maximum Junction Temperature7 Drain13 Source28 Drain14 Gate2D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25

CHENMKO ENTERPRISE CO.,LTDCHM4946JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

GSM4946W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

GSM4946BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=65m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

ME4946/ME4946-G Dual N-Channel 60-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)41m@VGS=10V The ME4946 is the Dual N-Channel logic enhancement mode power RDS(ON)52m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

MMN4946BEYData SheetM-MOS Semiconductor Hong Kong Limited60V Dual N-Channel Enhancement-Mode MOSFETVDS= 60VRDS(ON), Vgs@10V, Ids@5.3A = 41mRDS(ON), Vgs@4.5V, Ids@4.7A = 52mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N

STN4946STN4946STN4946STN4946Dual N Channel Enhancement Mode MOSFET12ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN4946 is the Dual N-Channel logic enhancement mode power field effecttransistors are produced using high cell density , DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particular

SHANGHAI July 2007 MICROELECTRONICS CO., LTD. SE4946 Dual N-Channel Enhancement-Mode MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 6.5A (VGS = 10V) on-resistance and cost-effectiveness. RDS(ON) =41m (VGS = 10V) RDS(ON) =52m (VGS = 4.5V) Pin configurations Se

CEM4946www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

SI4946BEY-T1www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Cha

VBZA4946www.VBsemi.comDual N-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.032RDS(on) () at VGS = 4.5 V 0.040ID (A) per leg6Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M

DTM4946www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

ME4946www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M