4946 Todos los transistores

 ..1. Size:999K  shenzhen
 4946.pdf

Shenzhen TuoFeng Semiconductor Technology co., LTD 4946 Dual N-Channel High Density Trench MOSFET PRODUCT SUMMARY FEATURES VDSS ID RDS(on) (m ) Max Super high dense cell trench design for low RDS(on). 5.0A 52 @ VGSP = 10V Rugged and reliable. 60V 4.0A 75 @ VGSP = 4.5V Surface Mount package. D1 D2 SOP-8 S1 1 8 D1 2 G1 7 D1 3 6 S2 D2 G1 G2 4 5 G2 D2 S1 S2 ABSOLUTE MA

 ..2. Size:3526K  cn tuofeng
 4946.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4946 N-Channel Enhancement Mode Power MOSFET SOP-8 1 8 S2 D2 Description 2 7 G2 D2 The 4946 uses advanced trench technology to provide 3 6 S1 D1 4 5 G1 D1 excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side Equivalent Cir cuit swit

 0.1. Size:254K  vishay
 si4946be.pdf

Si4946BEY Vishay Siliconix Dual N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET 60 9.2 nC 0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9

 0.2. Size:255K  vishay
 sq4946aey.pdf

SQ4946AEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.040 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.055 Material categorization For definitions of compliance please see ID (A) per leg 7 www.vishay.com/d

 0.3. Size:70K  vishay
 si4946ey.pdf

Si4946EY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 175_C Maximum Junction Temperature D 100% Rg Tested 0.055 @ VGS = 10 V 4.5 Pb-free Available 60 60 0.075 @ VGS = 4.5 V 3.9 SO-8 D S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G G2 4 D2 5 Top View S Ordering Information Si4946EY Si4946EY-

 0.4. Size:256K  vishay
 si4946bey.pdf

Si4946BEY Vishay Siliconix Dual N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET 60 9.2 nC 0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9

 0.5. Size:111K  vishay
 sq4946ey.pdf

SQ4946EY Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Pb-free Package with Low Thermal Resistance Available RDS(on) ( ) at VGS = 10 V 0.055 RoHS* ID (A) 4.5 AEC-Q101 RELIABILITY COMPLIANT Configuration Dual Passed all AEC-Q101 Reliability Testing Characterization Ongoing D1

 0.6. Size:225K  vishay
 si4946cdy.pdf

Si4946CDY www.vishay.com Vishay Siliconix Dual N-Channel 60 V (D-S) MOSFET FEATURES SO-8 Dual D2 TrenchFET power MOSFET D2 5 D1 6 100 % Rg tested D1 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS G2 3 3 S2 S2 2 2 DC/DC converter G1 D1 D2 G 1 1 Load switch S1 Top View Inve

 0.7. Size:105K  onsemi
 ntmfs4946n.pdf

NTMFS4946N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V CPU Power Delivery 30 V

 0.8. Size:230K  taiwansemi
 tsm4946dcs.pdf

TSM4946D 60V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 55 @ VGS = 10V 4.5 60 4. Gate 2 5. Drain 2 75 @ VGS = 4.5V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati

 0.9. Size:230K  hsmc
 h4946s.pdf

Spec. No. MOS200808 HI-SINCERITY Issued Date 2008.11.12 Revised Date 2009,03,05 MICROELECTRONICS CORP. Page No. 1/5 8-Lead Plastic DIP-8 H4946 Series Package Code P N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A) 8 Features 7 6 5 8-Lead Plastic SO-8 RDS(on)

 0.10. Size:602K  alfa-mos
 afn4946w.pdf

AFN4946W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=48m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 0.11. Size:600K  alfa-mos
 afn4946.pdf

AFN4946 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 0.12. Size:601K  alfa-mos
 afn4946bw.pdf

AFN4946BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=65m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 0.13. Size:1761K  kexin
 si4946dy.pdf

SMD Type MOSFET Dual N-Channel MOSFET SI4946DY (KI4946DY) SOP-8 Features VDS (V) = 60V 1.50 0.15 ID = 6.5 A (VGS = 10V) RDS(ON) 41m (VGS = 10V) RDS(ON) 52m (VGS = 4.5V) 1 Source1 5 Drain2 6 Drain2 2 Gate1 175 C Maximum Junction Temperature 7 Drain1 3 Source2 8 Drain1 4 Gate2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25

 0.14. Size:96K  chenmko
 chm4946jgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4946JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged an

 0.15. Size:438K  globaltech semi
 gsm4946.pdf

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 0.16. Size:432K  globaltech semi
 gsm4946w.pdf

 0.17. Size:408K  globaltech semi
 gsm4946bw.pdf

GSM4946BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=65m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.18. Size:1542K  matsuki electric
 me4946 me4946-g.pdf

ME4946/ME4946-G Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 41m @VGS=10V The ME4946 is the Dual N-Channel logic enhancement mode power RDS(ON) 52m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

 0.19. Size:158K  m-mos
 mmn4946bey.pdf

MMN4946BEY Data Sheet M-MOS Semiconductor Hong Kong Limited 60V Dual N-Channel Enhancement-Mode MOSFET VDS= 60V RDS(ON), Vgs@10V, Ids@5.3A = 41m RDS(ON), Vgs@4.5V, Ids@4.7A = 52m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain 1 Drain 2 Gate 1 Gate 2 Source 1 Source 2 Top View N

 0.20. Size:410K  stansontech
 stn4946.pdf

STN4946 STN4946 STN4946 STN4946 Dual N Channel Enhancement Mode MOSFET 12A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particular

 0.21. Size:1693K  allpower
 ap4946s.pdf

 0.22. Size:314K  cn sino-ic
 se4946.pdf

SHANGHAI July 2007 MICROELECTRONICS CO., LTD. SE4946 Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 6.5A (VGS = 10V) on-resistance and cost-effectiveness. RDS(ON) =41m (VGS = 10V) RDS(ON) =52m (VGS = 4.5V) Pin configurations Se

 0.23. Size:914K  cn vbsemi
 cem4946.pdf

CEM4946 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel

 0.24. Size:947K  cn vbsemi
 si4946bey-t1.pdf

SI4946BEY-T1 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Cha

 0.25. Size:1775K  cn vbsemi
 vbza4946.pdf

VBZA4946 www.VBsemi.com Dual N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.032 RDS(on) ( ) at VGS = 4.5 V 0.040 ID (A) per leg 6 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel M

 0.26. Size:913K  cn vbsemi
 dtm4946.pdf

DTM4946 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel

 0.27. Size:955K  cn vbsemi
 me4946.pdf

ME4946 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel M