9926A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFETDual N-Channel MOSFET9926AFeatures6A , 20 V . rDS(on) = 0. 030 @VGS =4.5 V5.2A , 20 V rDS(on) = 0. 040 @VGS =2.5 V.Absolute Maximum Ratings Ta = 25Parameter Symbol 10 secs Steady Sate UnitDrai n-S ourc e V ol t age V DS 20 VGat e-S ourc e V ol t age V GS 10 VContinuous Drain Current Ta=25 6 AIDPulsed Dra

Plastic-Encapsulate Mosfets Dual N-Channel Enhancement Mode Field Effect Transistor9926AFeaturesVDS (V) = 20VID = 7ARDS(ON)

1 2 3DFM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD.9926A(S&CIC1368) 20V N MOS R (ON), Vgs@2.5V, Ids@5.0A = 42mDSR (ON), Vgs@4.5V, Ids@6.0A =

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8 Plastic-Encapsulate MOSFETS 9926AN-Channel Enhancement Mode Power MOSFET SOP-8L D2D2Description D1D1The 9926A uses advanced trench technology to provide G2excellent RDS(ON) and low gate charge . The complementary GS2G1 SSS1MOSFETs may be used to form a level shifted high side SO-8 SPin 1switch, and fo

July 2003FDS9926ADual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese N-Channel 2.5V specified MOSFETs use6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 43 m @ VGS = 2.5 V.process. It has been optimized for power managementapplications with a wide range of gate drive voltage Optimized

CEM9926ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

APM9926AKDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON) =28m (typ.) @ VGS =4.5VRDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1D2 D2Applications Power Management in Portable Equipment andBattery Powered Systems (2) (4)G1

SMD Type MOSFETSMD TypeDual N-Channel MOSFETKI9926ASOP-8 Features RDS(on) = 0.030 @ VGS = 4.5 V RDS(on) = 0.040 @ VGS = 2.5 V.1.50 0.15D1 D2S1 1 D18G1 2 D17G1 G2S2 3 D26G2 4 D25S1 S2Top View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 12 VContinuous Drain

CHENMKO ENTERPRISE CO.,LTDCHM9926AJGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and

SL9926A 20V/6A Dual N-Channel MOSFETFeaturesProduct Summary Trench Power LV MOSFET technologyVDS RDS(ON) MAX ID MAX High Power and current handing capability30m@4.5VD220V S1 6AD145m@2.5VApplication PWM applicationD1 Load SwitchD1D2D2D1 D1 D2 D2S19926A : Device codeG1XXXXX : CodeS29926AG2XXXXXSOP-8 top view Schematic diagram

WSP9926ADual N-Channel MOSFETGeneral Description Product SummeryThe WSP9926A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 20m 7.5Aand gate charge for most of the small power switching and load switch applications. Applications The WSP9926A meet the RoHS and Green Product requirement w

FDS9926Awww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

VBZA9926Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 10 V 5.8 TrenchFET Power MOSFET200.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25