9926A Todos los transistores

 ..1. Size:672K  shenzhen
 9926a.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926A Features 6A , 20 V . rDS(on) = 0. 030 @VGS =4.5 V 5.2A , 20 V rDS(on) = 0. 040 @VGS =2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady Sate Unit Drai n-S ourc e V ol t age V DS 20 V Gat e-S ourc e V ol t age V GS 10 V Continuous Drain Current Ta=25 6 A ID Pulsed Dra

 ..2. Size:1780K  guangdong hottech
 9926a.pdf

Plastic-Encapsulate Mosfets Dual N-Channel Enhancement Mode Field Effect Transistor 9926A Features VDS (V) = 20V ID = 7A RDS(ON)

 ..3. Size:684K  cn shenzhen fuman elec
 9926a.pdf

1 2 3 D FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. 9926A( S&CIC1368) 20V N MOS R (ON), Vgs@2.5V, Ids@5.0A = 42m DS R (ON), Vgs@4.5V, Ids@6.0A =

 ..4. Size:3534K  cn tuofeng
 9926a.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9926A N-Channel Enhancement Mode Power MOSFET SOP-8L D2 D2 Description D1 D1 The 9926A uses advanced trench technology to provide G2 excellent RDS(ON) and low gate charge . The complementary G S2 G1 S S S1 MOSFETs may be used to form a level shifted high side SO-8 S Pin 1 switch, and fo

 0.1. Size:116K  fairchild semi
 fds9926a.pdf

July 2003 FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET Features General Description These N-Channel 2.5V specified MOSFETs use 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 43 m @ VGS = 2.5 V. process. It has been optimized for power management applications with a wide range of gate drive voltage Optimized

 0.2. Size:46K  vishay
 si9926ady.pdf

 0.3. Size:409K  cet
 cem9926a.pdf

CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

 0.4. Size:203K  anpec
 apm9926ak.pdf

APM9926AK Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS =4.5V RDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Portable Equipment and Battery Powered Systems (2) (4) G1

 0.5. Size:458K  kexin
 ki9926a.pdf

SMD Type MOSFET SMD Type Dual N-Channel MOSFET KI9926A SOP-8 Features RDS(on) = 0.030 @ VGS = 4.5 V RDS(on) = 0.040 @ VGS = 2.5 V. 1.50 0.15 D1 D2 S1 1 D1 8 G1 2 D1 7 G1 G2 S2 3 D2 6 G2 4 D2 5 S1 S2 Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 V Continuous Drain

 0.6. Size:94K  chenmko
 chm9926ajgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM9926AJGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and

 0.7. Size:761K  slkor
 sl9926a.pdf

SL9926A 20V/6A Dual N-Channel MOSFET Features Product Summary Trench Power LV MOSFET technology VDS RDS(ON) MAX ID MAX High Power and current handing capability 30m @4.5V D2 20V S1 6A D1 45m @2.5V Application PWM application D1 Load Switch D1 D2 D2 D1 D1 D2 D2 S1 9926A Device code G1 XXXXX Code S2 9926A G2 XXXXX SOP-8 top view Schematic diagram

 0.8. Size:1005K  jiejie micro
 jmtp9926a.pdf

JMTP9926A Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 20V, 6.5A Load Switch RDS(ON)

 0.9. Size:1325K  winsok
 wsp9926a.pdf

WSP9926A Dual N-Channel MOSFET General Description Product Summery The WSP9926A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 20m 7.5A and gate charge for most of the small power switching and load switch applications. Applications The WSP9926A meet the RoHS and Green Product requirement w

 0.10. Size:854K  cn vbsemi
 fds9926a.pdf

FDS9926A www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2

 0.11. Size:1779K  cn vbsemi
 vbza9926a.pdf

VBZA9926A www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.020 at VGS = 10 V 5.8 TrenchFET Power MOSFET 20 0.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5

 0.12. Size:1438K  cn apm
 ap9926a.pdf

AP9926A 20V N+N-Channel Enhancement Mode MOSFET Description The AP9926A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.5A DS D R