APM2317 Todos los transistores

 ..1. Size:403K  shenzhen
 apm2317.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd APM2317 P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.5A , RDS(ON)=28m (typ.) @ VGS=-4.5V RDS(ON)=38m (typ.) @ VGS=-2.5V RDS(ON)=55m (typ.) @ VGS=-1.8V Super High Dense Cell Design Reliable and Rugged S Lead Free and Green Devices Available (RoHS Compliant) Applications G Power Management

 0.1. Size:650K  sino
 apm2317a.pdf

APM2317A P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.5A , D RDS(ON)=28m (typ.) @ VGS=-4.5V S RDS(ON)=38m (typ.) @ VGS=-2.5V G RDS(ON)=55m (typ.) @ VGS=-1.8V Top View of SOT-23-3 Super High Dense Cell Design Reliable and Rugged S Lead Free and Green Devices Available (RoHS Compliant) Applications G Power Management in Notebook Com

 0.2. Size:854K  cn vbsemi
 apm2317ac.pdf

APM2317AC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO

 8.1. Size:133K  anpec
 apm2318a.pdf

APM2318A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/3A , D RDS(ON)=35m (typ.) @ VGS=10V RDS(ON)=40m (typ.) @ VGS=4.5V G RDS(ON)=60m (typ.) @ VGS=2.5V S Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged Lead Free Available (RoHS Compliant) D Applications G Power Management in

 8.2. Size:851K  cn vbsemi
 apm2315ac.pdf

APM2315AC www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2

 8.3. Size:2321K  cn vbsemi
 apm2314ac.pdf

APM2314AC www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC