SI2323 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2323P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)APPLICATIONS0.043 @ VGS = -4.5 V -4.0D Load Switch-20 0.054 @ VGS = -2.5 V - 4.0D PA Switch0.075 @ VGS = -1.8 V - 2.0TO-236(SOT-23)G 13 DS 2Top ViewSi2323 (D3)**Marking CodeABSOLUTE MAXIMUM RATINGS

Si2323DDSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) 100 % Rg Tested Material categorization:0.039 at VGS = - 4.5 V - 5.3For definitions of compliance please see- 20 0.050 at VGS = - 2.5 V - 4.7 13.6 nCwww.vishay.com/doc?999120.075 at VGS = - 1.8 V - 3.8APPLICATION

Si2323CDSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.039 at VGS = - 4.5 V TrenchFET Power MOSFET- 6e 100 % Rg Tested- 20 0.050 at VGS = - 2.5 V - 5.8 9 nC Compliant to RoHS Directive 2002/95/EC0.063 at VGS = - 1.8 V - 5.1APPLI

Si2323DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.039 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET 0.052 at VGS = - 2.5 V - 20 - 4.10.068 at VGS = - 1.8 V - 3.5APPLICATIONS Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2Top ViewS

Si2323CDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () 100 % Rg TestedID (A)a Qg (Typ.) Material categorization:0.039 at VGS = -4.5 V -6eFor definitions of compliance please see-20 0.050 at VGS = -2.5 V -5.8 9 nCwww.vishay.com/doc?999120.063 at VGS = -1.8 V -5.1APPLICATIONS

SMD Type MOSFETP-Channel Enhancement MOSFET SI2323DS (KI2323DS)SOT-23Unit: mm Features2.9+0.1-0.1+0.10.4 -0.1 VDS (V) =-20V3 ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V) RDS(ON) 52m (VGS =-2.5V)1 2 RDS(ON) 68m (VGS =-1.8V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain A

SMD Type MOSFETP-Channel Enhancement MOSFET SI2323DS (KI2323DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-20V ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V)1 2 RDS(ON) 52m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 68m (VGS =-1.8V)G 13 D1. GateS 2 2. Source3. Drain

SI2323CDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter

SI2323DS-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

SI2323DDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter