SI2323 Todos los transistores

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2323 P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) APPLICATIONS 0.043 @ VGS = -4.5 V -4.0 D Load Switch -20 0.054 @ VGS = -2.5 V - 4.0 D PA Switch 0.075 @ VGS = -1.8 V - 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2323 (D3)* *Marking Code ABSOLUTE MAXIMUM RATINGS

Si2323DDS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d Qg (Typ.) 100 % Rg Tested Material categorization 0.039 at VGS = - 4.5 V - 5.3 For definitions of compliance please see - 20 0.050 at VGS = - 2.5 V - 4.7 13.6 nC www.vishay.com/doc?99912 0.075 at VGS = - 1.8 V - 3.8 APPLICATION

Si2323CDS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.039 at VGS = - 4.5 V TrenchFET Power MOSFET - 6e 100 % Rg Tested - 20 0.050 at VGS = - 2.5 V - 5.8 9 nC Compliant to RoHS Directive 2002/95/EC 0.063 at VGS = - 1.8 V - 5.1 APPLI

Si2323DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.039 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET 0.052 at VGS = - 2.5 V - 20 - 4.1 0.068 at VGS = - 1.8 V - 3.5 APPLICATIONS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View S

Si2323CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) 100 % Rg Tested ID (A)a Qg (Typ.) Material categorization 0.039 at VGS = -4.5 V -6e For definitions of compliance please see -20 0.050 at VGS = -2.5 V -5.8 9 nC www.vishay.com/doc?99912 0.063 at VGS = -1.8 V -5.1 APPLICATIONS

SMD Type MOSFET P-Channel Enhancement MOSFET SI2323DS (KI2323DS) SOT-23 Unit mm Features 2.9+0.1 -0.1 +0.1 0.4 -0.1 VDS (V) =-20V 3 ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V) RDS(ON) 52m (VGS =-2.5V) 1 2 RDS(ON) 68m (VGS =-1.8V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain A

SMD Type MOSFET P-Channel Enhancement MOSFET SI2323DS (KI2323DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-20V ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V) 1 2 RDS(ON) 52m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 68m (VGS =-1.8V) G 1 3 D 1. Gate S 2 2. Source 3. Drain

SI2323CDS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter

SI2323DS-T1 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT

SI2323DDS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter