XP151A13AO Todos los transistores

 

XP151A13AO MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: XP151A13AO

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SOT23

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XP151A13AO datasheet

 5.1. Size:358K  shenzhen
xp151a13a0mr.pdf pdf_icon

XP151A13AO

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance 0.1 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in

 5.2. Size:95K  tysemi
xp151a13a0mr-g.pdf pdf_icon

XP151A13AO

Product specification XP151A13A0MR-G Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package m

 5.3. Size:306K  torex
xp151a13a0mr-g.pdf pdf_icon

XP151A13AO

XP151A13A0MR-G ETR1119_003 Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high

Otros transistores... SI2310 , SI2313 , SI2314 , SI2315 , SI2319 , SI2323 , SI2328 , SIA519 , 8N60 , XP152A12CO , 20N06 , 60N03 , 70N03 , 90N03 , SSS10N60 , SSS12N60 , SSS1N60 .

 

 

 


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